Low-power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz dual-conversion receiver

Yo‐Sheng Lin, Tien-Hung Chang, Chang‐Zhi Chen, Chi-Chen Chen, H. Yang, S. Wong
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引用次数: 10

Abstract

A low-power low-phase-noise 48-GHz CMOS LC voltage-control oscillator (VCO) and a low-power 60-GHz CMOS low-noise amplifier (LNA) for 60-GHz dual-conversion receiver are reported. The VCO dissipated 5.556 mW power, and achieved state-of-the-art phase noise of −105 dBc/Hz at 1-MHz offset from 47.84 GHz. The corresponding figure-of-merit (FOM) was −191.1 dBc/Hz, which is better than those of the reported CMOS LC VCOs around 48 GHz in the literature. Besides, the LNA consumed 21.4 mW power, and achieved input return loss (S11) of −10.6∼ −37.4 dB, voltage gain (AV) of 10.7∼ 18.8 dB, reverse isolation (S12) of −43.5∼ −48.1 dB, input referred 1-dB compression point (P1dB-in) of −16.2∼ −20.8 dBm, and input third-order inter-modulation point (IIP3) of −4∼ −7.5 dBm over the 57-64-GHz-band of interest.
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用于60ghz双转换接收机的低功耗48ghz CMOS VCO和60ghz CMOS LNA
报道了一种低功耗低相位噪声的48ghz CMOS LC压控振荡器(VCO)和用于60ghz双转换接收机的低功耗60ghz CMOS低噪声放大器(LNA)。VCO的功耗为5.556 mW,在47.84 GHz的1 mhz偏移时,相位噪声为- 105 dBc/Hz。相应的品质因数(FOM)为- 191.1 dBc/Hz,优于文献中报道的48 GHz左右的CMOS LC压控振荡器。此外,LNA功耗为21.4 mW,在57-64- ghz频段内实现了−10.6 ~−37.4 dB的输入回波损耗(S11)、10.7 ~ 18.8 dB的电压增益(AV)、−43.5 ~−48.1 dB的反向隔离(S12)、−16.2 ~−20.8 dBm的输入参考1-dB压缩点(P1dB-in)和−4 ~−7.5 dBm的输入三阶互调点(IIP3)。
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