Integration of Antenna-on-Chip and signal detectors for applications from RF to THz frequency range in SiGe technology

S. Wane, R. van Heijster, S. Bardy
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引用次数: 13

Abstract

This paper presents design solutions for signal detectors and Antenna on-Chip (AoC) using a state-of-the-art (SiGe) BiCMOS technology. Both CML (Current-Mode-Logic) and CMOS detectors are designed, fabricated and compared in terms of their performances such as conversion gain and robustness against process variations. Wide-band Antenna-on-Chip working in the range 60GHz to 94 GHz are designed, fabricated and characterized. Several Antenna-on-Chip structures are proposed to evaluate bandwidth and radiation efficiency performances. Near-field antenna couplings are experimentally evaluated using different technology variants with different silicon substrate thickness values. Schottky diodes are designed and characterized for feasibility analysis of THz detection, mixing and down-conversion.
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集成天线片和信号探测器的应用从射频到太赫兹频率范围在SiGe技术
本文介绍了使用最先进的(SiGe) BiCMOS技术的信号探测器和片上天线(AoC)的设计解决方案。CML(电流模式逻辑)和CMOS探测器都设计,制造和比较其性能,如转换增益和对工艺变化的鲁棒性。设计、制作并表征了工作在60GHz ~ 94ghz范围内的宽带片上天线。提出了几种片上天线结构来评估带宽和辐射效率性能。采用不同的技术变体和不同的硅衬底厚度值对近场天线耦合进行了实验评估。设计并表征了肖特基二极管,用于太赫兹探测、混频和下变频的可行性分析。
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