G. Han, Yue Yang, P. Guo, Chunlei Zhan, Kain Lu Low, K. Goh, B. Liu, E. Toh, Y. Yeo
{"title":"PBTI characteristics of N-channel tunneling field effect transistor with HfO2 gate dielectric: New insights and physical model","authors":"G. Han, Yue Yang, P. Guo, Chunlei Zhan, Kain Lu Low, K. Goh, B. Liu, E. Toh, Y. Yeo","doi":"10.1109/VLSI-TSA.2012.6210114","DOIUrl":null,"url":null,"abstract":"We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔVTH and Gm loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210114","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔVTH and Gm loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
