40-GHz frequency dividers with reduced power dissipation fabricated using high-speed small-emitter-area AlGaAs/InGaAs HBTs

Y. Amamiya, T. Niwa, N. Nagano, M. Mamada, Y. Suzuki, H. Shimawaki
{"title":"40-GHz frequency dividers with reduced power dissipation fabricated using high-speed small-emitter-area AlGaAs/InGaAs HBTs","authors":"Y. Amamiya, T. Niwa, N. Nagano, M. Mamada, Y. Suzuki, H. Shimawaki","doi":"10.1109/GAAS.1998.722644","DOIUrl":null,"url":null,"abstract":"This paper reports low power dissipation 40-GHz frequency dividers fabricated using high-performance AlGaAs/InGaAs HBTs. The high-speed performance of small-emitter-area HBTs was markedly improved by analyzing the device delay time and reducing the emitter resistance R/sub E/. An f/sub T/ of above 110 GHz and an f/sub max/ of 250 GHz were achieved with a small emitter area of 2.8 /spl mu/m/sup 2/. A frequency divider fabricated using these high-speed small-emitter-area HBTs operated at 40 GHz with an output voltage of 0.6 V/sub P-P/ and a low power dissipation of 0.9 W. The power dissipation is reduced by 43% compared with that for a frequency divider using conventional size HBTs.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

This paper reports low power dissipation 40-GHz frequency dividers fabricated using high-performance AlGaAs/InGaAs HBTs. The high-speed performance of small-emitter-area HBTs was markedly improved by analyzing the device delay time and reducing the emitter resistance R/sub E/. An f/sub T/ of above 110 GHz and an f/sub max/ of 250 GHz were achieved with a small emitter area of 2.8 /spl mu/m/sup 2/. A frequency divider fabricated using these high-speed small-emitter-area HBTs operated at 40 GHz with an output voltage of 0.6 V/sub P-P/ and a low power dissipation of 0.9 W. The power dissipation is reduced by 43% compared with that for a frequency divider using conventional size HBTs.
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采用高速小发射面积AlGaAs/InGaAs HBTs制造了功耗降低的40ghz分频器
本文报道了采用高性能AlGaAs/InGaAs HBTs制备的低功耗40ghz分频器。通过分析器件延迟时间和降低发射极电阻R/sub / E,可以显著提高小发射极面积HBTs的高速性能。在发射器面积仅为2.8 /spl mu/m/sup /的情况下,实现了110 GHz以上的f/sub T/和250 GHz的f/sub max/。利用这些高速小发射区hbt制成的分频器工作频率为40 GHz,输出电压为0.6 V/sub P-P/,功耗为0.9 W。与使用传统尺寸hbt的分频器相比,功耗降低了43%。
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