Y. Amamiya, T. Niwa, N. Nagano, M. Mamada, Y. Suzuki, H. Shimawaki
{"title":"40-GHz frequency dividers with reduced power dissipation fabricated using high-speed small-emitter-area AlGaAs/InGaAs HBTs","authors":"Y. Amamiya, T. Niwa, N. Nagano, M. Mamada, Y. Suzuki, H. Shimawaki","doi":"10.1109/GAAS.1998.722644","DOIUrl":null,"url":null,"abstract":"This paper reports low power dissipation 40-GHz frequency dividers fabricated using high-performance AlGaAs/InGaAs HBTs. The high-speed performance of small-emitter-area HBTs was markedly improved by analyzing the device delay time and reducing the emitter resistance R/sub E/. An f/sub T/ of above 110 GHz and an f/sub max/ of 250 GHz were achieved with a small emitter area of 2.8 /spl mu/m/sup 2/. A frequency divider fabricated using these high-speed small-emitter-area HBTs operated at 40 GHz with an output voltage of 0.6 V/sub P-P/ and a low power dissipation of 0.9 W. The power dissipation is reduced by 43% compared with that for a frequency divider using conventional size HBTs.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
This paper reports low power dissipation 40-GHz frequency dividers fabricated using high-performance AlGaAs/InGaAs HBTs. The high-speed performance of small-emitter-area HBTs was markedly improved by analyzing the device delay time and reducing the emitter resistance R/sub E/. An f/sub T/ of above 110 GHz and an f/sub max/ of 250 GHz were achieved with a small emitter area of 2.8 /spl mu/m/sup 2/. A frequency divider fabricated using these high-speed small-emitter-area HBTs operated at 40 GHz with an output voltage of 0.6 V/sub P-P/ and a low power dissipation of 0.9 W. The power dissipation is reduced by 43% compared with that for a frequency divider using conventional size HBTs.