A. Bessemoulin, M.R. Quay, S. Ramberger, M. Schlechtweg
{"title":"A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE","authors":"A. Bessemoulin, M.R. Quay, S. Ramberger, M. Schlechtweg","doi":"10.1109/GAAS.2002.1049057","DOIUrl":null,"url":null,"abstract":"The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-/spl mu/m gate length GaAs power PHEMT process on 4\" wafer, this two-stage amplifier, having a chip size of 16 mm/sup 2/, averages 4 Watts CW and 25-% PAE in the X-band, with more than 18-dB linear gain. Peak output powers of P/sub -1dB/ = 36.3 dBm (4.3 Watts) and P/sub sat/ of 36.9 dBm (4.9 Watt) at 10 GHz with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAs.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22
Abstract
The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-/spl mu/m gate length GaAs power PHEMT process on 4" wafer, this two-stage amplifier, having a chip size of 16 mm/sup 2/, averages 4 Watts CW and 25-% PAE in the X-band, with more than 18-dB linear gain. Peak output powers of P/sub -1dB/ = 36.3 dBm (4.3 Watts) and P/sub sat/ of 36.9 dBm (4.9 Watt) at 10 GHz with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAs.
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