{"title":"An EPROM cell with a magnesium electronic injector","authors":"S. O. Kong, C. Kwok, S. Wong","doi":"10.1109/TENCON.1995.496438","DOIUrl":null,"url":null,"abstract":"By using Mg as the tunnelling electrode for an EPROM cell, it is shown in a control experiment that the tunnelling current is much enhanced while the tunnelling field is much reduced after a sintering procedure in which Mg reacts with the SiO/sub 2/ dielectric. Potentially, this may lead to faster programming, lower programming voltages and better programming endurance. An experimental EPROM cell has been made and has demonstrated programmability.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"204 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
By using Mg as the tunnelling electrode for an EPROM cell, it is shown in a control experiment that the tunnelling current is much enhanced while the tunnelling field is much reduced after a sintering procedure in which Mg reacts with the SiO/sub 2/ dielectric. Potentially, this may lead to faster programming, lower programming voltages and better programming endurance. An experimental EPROM cell has been made and has demonstrated programmability.
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