{"title":"The phonon drag effect on thermopower in p-CdTe","authors":"Y. Gurevich, S. Vacková, K. Žďánský","doi":"10.1109/ICT.1996.553296","DOIUrl":null,"url":null,"abstract":"Cadmium telluride (CdTe) is a wide band-gap semiconductor which has many applications in various fields, from detectors of nuclear radiation to infra-red diodes and solar cells. The aim of this paper is to describe the new observed experimental effect-the influence of temperature gradient /spl Delta/T on the electrical properties of the systems: Au/p-CdTe/Au (Au/CT/Au), Au/p-Cd/sub 0.96/Zn/sub 0.04/Te/Au (Au/CZT/Au). Its explanation based on theory, the role of non-equilibrium carriers appearing due to /spl Delta/T, is given. The interpretation of the results is based on extended thermo emission-diffusion theories of charge carrier transport through a Schottky diode structure. The influence of Richardson constant was also considered for carriers passing from the metal into the semiconductor.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.1996.553296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Cadmium telluride (CdTe) is a wide band-gap semiconductor which has many applications in various fields, from detectors of nuclear radiation to infra-red diodes and solar cells. The aim of this paper is to describe the new observed experimental effect-the influence of temperature gradient /spl Delta/T on the electrical properties of the systems: Au/p-CdTe/Au (Au/CT/Au), Au/p-Cd/sub 0.96/Zn/sub 0.04/Te/Au (Au/CZT/Au). Its explanation based on theory, the role of non-equilibrium carriers appearing due to /spl Delta/T, is given. The interpretation of the results is based on extended thermo emission-diffusion theories of charge carrier transport through a Schottky diode structure. The influence of Richardson constant was also considered for carriers passing from the metal into the semiconductor.
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