Hidekazu Takahashi, M. Kinoshita, Kazumichi Morita, Takahiro Shirai, Toshiaki Sato, T. Kimura, H. Yuzurihara, S. Inoue
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引用次数: 11
Abstract
A CMOS image sensor with a shared 1.5 transistor/pixel architecture and buried photodiode with complete charge transfer capability is described. The sensor achieves a 330 /spl mu/V noise floor and 50 pA/cm/sup 2/ dark current at 45/spl deg/C. The chip is fabricated in a thin planarized 0.35 /spl mu/m 1P2M CMOS process.
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