首页 > 最新文献

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)最新文献

英文 中文
Dynamic voltage and frequency management for a low-power embedded microprocessor 一种低功耗嵌入式微处理器的动态电压和频率管理
Pub Date : 2005-04-01 DOI: 10.1093/ietele/e88-c.4.520
T. Seki, S. Akui, K. Seno, M. Nakai, T. Meguro, Tetsuo Kondo, A. Hashiguchi, Hirokazu Kawahara, K. Kumano, M. Shimura
A dynamic voltage and frequency management scheme that autonomously controls the clock frequency (8 to 123 MHz at 0.5 MHz step) and adaptively controls the voltage (0.9 to 1.6 V at 5 mV step) with a leakage power compensation effect is developed for a low-power embedded microprocessor. It achieves 82% power reduction in personal information manager (PIM) application.
针对低功耗嵌入式微处理器,提出了一种具有泄漏功率补偿效果的动态电压和频率管理方案,该方案能够自主控制时钟频率(在0.5 MHz步进时为8 ~ 123 MHz)和自适应控制电压(在5 mV步进时为0.9 ~ 1.6 V)。在个人信息管理(PIM)应用程序中实现82%的功耗降低。
{"title":"Dynamic voltage and frequency management for a low-power embedded microprocessor","authors":"T. Seki, S. Akui, K. Seno, M. Nakai, T. Meguro, Tetsuo Kondo, A. Hashiguchi, Hirokazu Kawahara, K. Kumano, M. Shimura","doi":"10.1093/ietele/e88-c.4.520","DOIUrl":"https://doi.org/10.1093/ietele/e88-c.4.520","url":null,"abstract":"A dynamic voltage and frequency management scheme that autonomously controls the clock frequency (8 to 123 MHz at 0.5 MHz step) and adaptively controls the voltage (0.9 to 1.6 V at 5 mV step) with a leakage power compensation effect is developed for a low-power embedded microprocessor. It achieves 82% power reduction in personal information manager (PIM) application.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124437730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 205
Burst-mode receiver for 1.25Gb/s Ethernet PON with AGC and internally created reset signal 突发模式接收器1.25Gb/s以太网PON与AGC和内部创建复位信号
Pub Date : 2004-11-30 DOI: 10.1109/JSSC.2004.835644
Quan Le, Sang-Gug Lee, Y. Oh, Ho-Yong Kang, T. Yoo
A burst-mode receiver for 1.25 Gb/s Ethernet passive optical network (PON) systems is implemented in 0.18 /spl mu/m CMOS technology. With AGC, the receiver achieves a sensitivity of -22 dBm, overload of -3.5 dBm and loud/soft ratio of 17.5 dB. The receiver creates an internal reset signal, and all timing parameters exceed current standards.
采用0.18 /spl mu/m CMOS技术实现了一种适用于1.25 Gb/s以太网无源光网络(PON)系统的突发模式接收器。采用AGC后,接收机的灵敏度为-22 dBm,过载为-3.5 dBm,响/软比为17.5 dB。接收机产生内部复位信号,所有时序参数均超过当前标准。
{"title":"Burst-mode receiver for 1.25Gb/s Ethernet PON with AGC and internally created reset signal","authors":"Quan Le, Sang-Gug Lee, Y. Oh, Ho-Yong Kang, T. Yoo","doi":"10.1109/JSSC.2004.835644","DOIUrl":"https://doi.org/10.1109/JSSC.2004.835644","url":null,"abstract":"A burst-mode receiver for 1.25 Gb/s Ethernet passive optical network (PON) systems is implemented in 0.18 /spl mu/m CMOS technology. With AGC, the receiver achieves a sensitivity of -22 dBm, overload of -3.5 dBm and loud/soft ratio of 17.5 dB. The receiver creates an internal reset signal, and all timing parameters exceed current standards.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126250124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 53
A 2 GHz CMOS variable-gain amplifier with 50 dB linear-in-magnitude controlled gain range for 10GBase-LX4 Ethernet 一种用于10GBase-LX4以太网的50db线性幅度控制增益范围的2ghz CMOS变增益放大器
Pub Date : 2004-09-13 DOI: 10.1109/ISSCC.2004.1332805
Chia-Hsin Wu, Chang-Shun Liu, Shen-luan Liu
A fully integrated 2 GHz variable gain amplifier is implemented in a 0.18 /spl mu/m CMOS process to achieve 50 dB linear-in-magnitude controlled-gain range for 10GBase-LX4 Ethernet. The measured dynamic range is 35 dB from 9 to 495 mVpp with BER less than 10/sup -12/. The 0.7 mm/sup 2/ chip dissipates 40 mW.
完全集成的2 GHz可变增益放大器采用0.18 /spl mu/m CMOS工艺实现,可为10GBase-LX4以太网实现50 dB线性幅度控制增益范围。测量的动态范围为35 dB,从9到495 mVpp,误码率小于10/sup -12/。0.7 mm/sup 2/芯片的功耗为40 mW。
{"title":"A 2 GHz CMOS variable-gain amplifier with 50 dB linear-in-magnitude controlled gain range for 10GBase-LX4 Ethernet","authors":"Chia-Hsin Wu, Chang-Shun Liu, Shen-luan Liu","doi":"10.1109/ISSCC.2004.1332805","DOIUrl":"https://doi.org/10.1109/ISSCC.2004.1332805","url":null,"abstract":"A fully integrated 2 GHz variable gain amplifier is implemented in a 0.18 /spl mu/m CMOS process to achieve 50 dB linear-in-magnitude controlled-gain range for 10GBase-LX4 Ethernet. The measured dynamic range is 35 dB from 9 to 495 mVpp with BER less than 10/sup -12/. The 0.7 mm/sup 2/ chip dissipates 40 mW.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115411273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 60
A 3 V CMOS quad-spectrum ADSL CPE analog front-end with 5 V integrated line driver 一个3v CMOS四频谱ADSL CPE模拟前端与5v集成线路驱动器
Pub Date : 2004-09-13 DOI: 10.1109/ISSCC.2004.1332766
R. Hogervorst, B. Tourette, N. Monier, O. Metayer, E. Afifi, J.-C. Delefosse, J. Michel
The analog front-end (AFE) for ADSL customer premise equipment (CPE) permits quad-spectrum down-stream (138 kHz to 3.75 MHz). The AFE includes a 5 V line driver in a standard 0.18 /spl mu/m 3 V CMOS process. The receive path contains an ADC with an 80 dB SNDR over 3.75 MHz bandwidth. Down-stream data rates of more than 50 Mb/s are measured on short loops.
ADSL客户端设备(CPE)的模拟前端(AFE)允许四频谱下行(138 kHz至3.75 MHz)。该AFE包括一个5v线路驱动器,采用标准的0.18 /spl mu/m 3v CMOS工艺。接收路径包含一个ADC, SNDR为80 dB,带宽为3.75 MHz。在短环路上测量的下行数据速率超过50 Mb/s。
{"title":"A 3 V CMOS quad-spectrum ADSL CPE analog front-end with 5 V integrated line driver","authors":"R. Hogervorst, B. Tourette, N. Monier, O. Metayer, E. Afifi, J.-C. Delefosse, J. Michel","doi":"10.1109/ISSCC.2004.1332766","DOIUrl":"https://doi.org/10.1109/ISSCC.2004.1332766","url":null,"abstract":"The analog front-end (AFE) for ADSL customer premise equipment (CPE) permits quad-spectrum down-stream (138 kHz to 3.75 MHz). The AFE includes a 5 V line driver in a standard 0.18 /spl mu/m 3 V CMOS process. The receive path contains an ADC with an 80 dB SNDR over 3.75 MHz bandwidth. Down-stream data rates of more than 50 Mb/s are measured on short loops.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116690554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Parallel clocking: a multi-phase clock-network for 10GHz SoC 并行时钟:用于10GHz SoC的多相时钟网络
Pub Date : 2004-09-13 DOI: 10.1109/ISSCC.2004.1332735
K. Nose, M. Mizuno
The realization of SoCs operating at 10GHz and multiple frequency IP-cores is possible using parallel clocking. With 2.5GHz 4-phase parallel clocking, the skew reduction circuits and multi-phase flip-flops successfully operate at 10GHz.
使用并行时钟可以实现工作在10GHz和多频ip核的soc。采用2.5GHz 4相并行时钟,斜降电路和多相触发器成功地工作在10GHz。
{"title":"Parallel clocking: a multi-phase clock-network for 10GHz SoC","authors":"K. Nose, M. Mizuno","doi":"10.1109/ISSCC.2004.1332735","DOIUrl":"https://doi.org/10.1109/ISSCC.2004.1332735","url":null,"abstract":"The realization of SoCs operating at 10GHz and multiple frequency IP-cores is possible using parallel clocking. With 2.5GHz 4-phase parallel clocking, the skew reduction circuits and multi-phase flip-flops successfully operate at 10GHz.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126131335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A +110dBm IIP3 SiGe mixer with IM3 cancellation technique +110dBm IIP3 SiGe混频器,采用IM3对消技术
Pub Date : 2004-09-13 DOI: 10.1109/ISSCC.2004.1332762
S. Otaka, M. Ashida, M. Ishii, T. Itakura
A 3rd-order intermodulation (IM3) cancellation technique using a sub-mixer is proposed for low-power, low-distortion mixers. The technique reduces IM3 by 18dB with a current increase of less than 10%. The mixer achieves an IIP3 of 10dBm, a gain of 8.7dB, a NF of 9.8dB and dissipates 30mW from 2.9V.
针对低功耗、低失真混频器,提出了一种使用副混频器的三阶互调(IM3)对消技术。该技术在电流增加不到10%的情况下将IM3降低了18dB。混频器的IIP3为10dBm,增益为8.7dB, NF为9.8dB, 2.9V的功耗为30mW。
{"title":"A +110dBm IIP3 SiGe mixer with IM3 cancellation technique","authors":"S. Otaka, M. Ashida, M. Ishii, T. Itakura","doi":"10.1109/ISSCC.2004.1332762","DOIUrl":"https://doi.org/10.1109/ISSCC.2004.1332762","url":null,"abstract":"A 3rd-order intermodulation (IM3) cancellation technique using a sub-mixer is proposed for low-power, low-distortion mixers. The technique reduces IM3 by 18dB with a current increase of less than 10%. The mixer achieves an IIP3 of 10dBm, a gain of 8.7dB, a NF of 9.8dB and dissipates 30mW from 2.9V.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126945023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 13GHz CMOS distributed oscillator using MEMS coupled transmission lines for low phase noise 采用MEMS耦合传输线实现低相位噪声的13GHz CMOS分布式振荡器
Pub Date : 2004-09-13 DOI: 10.1109/ISSCC.2004.1332715
Eun-Chul Park, E. Yoon
A coupled distributed oscillator is designed using low-loss MEMS coupled transmission lines to achieve phase noise improvement of 7dB, and an additional 2dB improvement is attributed to the MEMS transmission lines. The oscillators are fabricated in a 0.18/spl mu/m 6M CMOS process, operate with a 1V supply and consume 26mW.
采用低损耗MEMS耦合传输线设计了一种耦合分布式振荡器,相位噪声改善7dB, MEMS传输线额外改善2dB。振荡器以0.18/spl mu/m的6M CMOS工艺制造,工作在1V电源下,功耗为26mW。
{"title":"A 13GHz CMOS distributed oscillator using MEMS coupled transmission lines for low phase noise","authors":"Eun-Chul Park, E. Yoon","doi":"10.1109/ISSCC.2004.1332715","DOIUrl":"https://doi.org/10.1109/ISSCC.2004.1332715","url":null,"abstract":"A coupled distributed oscillator is designed using low-loss MEMS coupled transmission lines to achieve phase noise improvement of 7dB, and an additional 2dB improvement is attributed to the MEMS transmission lines. The oscillators are fabricated in a 0.18/spl mu/m 6M CMOS process, operate with a 1V supply and consume 26mW.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126963204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 600 MHz DSP with 24 Mb embedded DRAM with an enhanced instruction set for wireless communication 一个600兆赫DSP与24 Mb嵌入式DRAM与一个增强的指令集无线通信
Pub Date : 2004-09-13 DOI: 10.1109/ISSCC.2004.1332772
Y. Adelman, D. Agur, T. Ben-Nun, O. Chalak, Z. Greenfield, R. Holzer, M. Jalfon, A. Kadry, E. Kraus, F. Lange, H. Meirov, A. Olofsson, O. Raikhman, D. Treves, S. Zur, R. Talmudi
A 600 MHz general-purpose DSP with 24 Mb of embedded DRAM, 154 GOPS, 4800 MMACS, and 40 Gb/s I/O throughput is presented. The chip contains over 60M transistors and is implemented in 0.13 /spl mu/m 8M CMOS technology.
提出了一种具有24mb嵌入式DRAM、154个GOPS、4800个MMACS和40gb /s I/O吞吐量的600mhz通用DSP。该芯片包含超过60M晶体管,采用0.13 /spl mu/m 8M CMOS技术实现。
{"title":"A 600 MHz DSP with 24 Mb embedded DRAM with an enhanced instruction set for wireless communication","authors":"Y. Adelman, D. Agur, T. Ben-Nun, O. Chalak, Z. Greenfield, R. Holzer, M. Jalfon, A. Kadry, E. Kraus, F. Lange, H. Meirov, A. Olofsson, O. Raikhman, D. Treves, S. Zur, R. Talmudi","doi":"10.1109/ISSCC.2004.1332772","DOIUrl":"https://doi.org/10.1109/ISSCC.2004.1332772","url":null,"abstract":"A 600 MHz general-purpose DSP with 24 Mb of embedded DRAM, 154 GOPS, 4800 MMACS, and 40 Gb/s I/O throughput is presented. The chip contains over 60M transistors and is implemented in 0.13 /spl mu/m 8M CMOS technology.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116155030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Combined linear-logarithmic CMOS image sensor 组合线性-对数CMOS图像传感器
Pub Date : 2004-09-13 DOI: 10.1109/ISSCC.2004.1332621
G. Storm, J. Hurwitz, D. Renshaw, K. Findlater, R. Henderson, M. Purcell
A 352/spl times/288 pixel array achieves >120 dB dynamic range through merging sequential linear and logarithmic images. Calibration is used to match offset and gain. A 7-transistor pixel is built in a 0.18 /spl mu/m 1P4M CMOS process.
352/spl倍/288像素阵列通过合并顺序线性和对数图像实现了> 120db的动态范围。校准用于匹配偏移和增益。一个7晶体管像素在0.18 /spl mu/m 1P4M CMOS工艺中构建。
{"title":"Combined linear-logarithmic CMOS image sensor","authors":"G. Storm, J. Hurwitz, D. Renshaw, K. Findlater, R. Henderson, M. Purcell","doi":"10.1109/ISSCC.2004.1332621","DOIUrl":"https://doi.org/10.1109/ISSCC.2004.1332621","url":null,"abstract":"A 352/spl times/288 pixel array achieves >120 dB dynamic range through merging sequential linear and logarithmic images. Calibration is used to match offset and gain. A 7-transistor pixel is built in a 0.18 /spl mu/m 1P4M CMOS process.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114591270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
A CMOS image sensor with reset level control using dynamic reset current source for noise suppression 一种采用动态复位电流源抑制噪声的复位电平控制的CMOS图像传感器
Pub Date : 2004-09-13 DOI: 10.1109/ISSCC.2004.1332620
Kwang-Hyun Lee, E. Yoon
A 512 /spl times/ 384 CMOS image sensor in 0.18/spl mu/m 1P4M technology with 5.9/spl mu/m pixel pitch and a dynamic reset current source to compensate for kTC reset noise and fixed pattern noise is presented. A total of 390/spl mu/V(rms) readout noise, and a factor of two improvement over conventional reset is achieved. The chip operates at 1.8V and consumes 40mW excluding I/O and off-chip DAC for a single-slope ADC at 24frames/s.
提出了一种采用0.18/spl mu/m 1P4M技术的512 /spl倍/ 384 CMOS图像传感器,像素间距5.9/spl mu/m,采用动态复位电流源补偿kTC复位噪声和固定模式噪声。总共390/spl mu/V(rms)读出噪声,并且比传统复位提高了两倍。该芯片工作电压为1.8V,功耗为40mW,不包括I/O和片外DAC,用于单斜率ADC,速度为24帧/秒。
{"title":"A CMOS image sensor with reset level control using dynamic reset current source for noise suppression","authors":"Kwang-Hyun Lee, E. Yoon","doi":"10.1109/ISSCC.2004.1332620","DOIUrl":"https://doi.org/10.1109/ISSCC.2004.1332620","url":null,"abstract":"A 512 /spl times/ 384 CMOS image sensor in 0.18/spl mu/m 1P4M technology with 5.9/spl mu/m pixel pitch and a dynamic reset current source to compensate for kTC reset noise and fixed pattern noise is presented. A total of 390/spl mu/V(rms) readout noise, and a factor of two improvement over conventional reset is achieved. The chip operates at 1.8V and consumes 40mW excluding I/O and off-chip DAC for a single-slope ADC at 24frames/s.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130367147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
期刊
2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1