{"title":"Novel gate concepts for MOS devices","authors":"J. Colinge","doi":"10.1109/ESSDER.2004.1356484","DOIUrl":null,"url":null,"abstract":"The classical MOSFET has a single gate electrode located at the top of the device. Recently, multiple-gate devices have been made using SOI substrates. The multiple-gate structure offers the benefit of potentially higher current drive and reduce short-channel effects. This paper compares the advantages of double-gate structures such as the FinFET, triple-gate structures, and \"triple-plus\"-gate devices such as the pi-gate and omega-gate MOSFETs.","PeriodicalId":287103,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","volume":"274 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"46","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDER.2004.1356484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 46
Abstract
The classical MOSFET has a single gate electrode located at the top of the device. Recently, multiple-gate devices have been made using SOI substrates. The multiple-gate structure offers the benefit of potentially higher current drive and reduce short-channel effects. This paper compares the advantages of double-gate structures such as the FinFET, triple-gate structures, and "triple-plus"-gate devices such as the pi-gate and omega-gate MOSFETs.
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