A tiny-capacitor-backed non-volatile buffer to reduce storage writes in smartphones

Mungyu Son, Junwhan Ahn, S. Yoo
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引用次数: 4

Abstract

Mobile storage writes are often dominated by writes to SQLite database files. Our characterization shows that they mostly consist of frequent overwrites with small new data (which we call small writes) and relatively infrequent writes with large data updates. In order to reduce writes to the Flash memory on smartphones, we propose exploiting these characteristics and present a low-cost nonvolatile write buffer for write coalescing. The key challenge in it is that the stringent resource constraints of mobile devices force the write buffer size to be minimized down to a single Flash page in order to reduce the overhead of SRAM buffer on the controller chip and a backing capacitor that maintains non-volatility of the buffer on power failure. As a solution to this problem, we propose three optimizations that make the best use of this small single-page nonvolatile write buffer. First, we propose managing only the difference between old and new data (i.e., differential logs) in the write buffer, based on the observation that small writes are frequent. Second, we develop a dynamic bypass scheme which judiciously bypasses overwrite-unfriendly pages from the write buffer. Third, we devise an incremental flush policy which controls the number of write buffer entries to be flushed according to the size of the newly written data. According to our experiments using four representative mobile applications on a real storage platform, OpenSSD, the proposed method gives average 69.5% and 64.5% reductions in Flash memory writes in single- and multi-application runs, respectively. In addition, our scheme introduces a very small cost into existing systems, including 8-18.5KB SRAM on the controller chip and a tiny capacitor occupying only 1.7% of eMMC package volume.
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一种小型电容支持的非易失性缓冲器,用于减少智能手机中的存储写入
移动存储写操作通常由对SQLite数据库文件的写操作主导。我们的特征表明,它们主要包括对小的新数据的频繁覆盖(我们称之为小的写)和对大数据更新的相对不频繁的写。为了减少智能手机上对闪存的写入,我们建议利用这些特性并提出一种低成本的非易失性写入缓冲区用于写入合并。其中的关键挑战是,移动设备严格的资源限制迫使写缓冲区大小最小化到单个Flash页面,以减少控制器芯片上的SRAM缓冲区的开销,以及在电源故障时保持缓冲区非易失性的后备电容器。作为这个问题的解决方案,我们提出了三种优化,以充分利用这个小的单页非易失性写缓冲区。首先,我们建议只管理写缓冲区中新旧数据之间的差异(即差异日志),这是基于对频繁进行小写的观察。其次,我们开发了一种动态绕过方案,可以明智地绕过写缓冲区中的不覆盖页面。第三,我们设计了一个增量刷新策略,该策略根据新写入数据的大小控制要刷新的写缓冲区条目的数量。根据我们在真实存储平台OpenSSD上使用四个具有代表性的移动应用程序的实验,所提出的方法在单应用程序和多应用程序运行时分别平均减少了69.5%和64.5%的闪存写入。此外,我们的方案在现有系统中引入了非常小的成本,包括控制器芯片上的8-18.5KB SRAM和仅占eMMC封装体积1.7%的微小电容器。
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Fault injection acceleration by architectural importance sampling Analysis and optimization of soft error tolerance strategies for real-time systems Improved hard real-time scheduling of CSDF-modeled streaming applications A tiny-capacitor-backed non-volatile buffer to reduce storage writes in smartphones Power-awareness and smart-resource management in embedded computing systems
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