Simultaneous Effects of Hydrostatic Pressure and External Electric Field on the Energy Spectra of Two Donors in a Strained Zinc Blende GaN/AlGaN Quantum Dot

D. Prasanna, P. Elangovan
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Abstract

The energy spectrum of two donors in a strained GaN quantum dot embedded in Al\(_x\)Ga\(_{1-x}\)N has been investigated under the influence of hydrostatic pressure and external electric field. Our calculations are carried out using variational principle within the single band effective mass approximation by means of dot radius, hydrostatic pressure, and electric field. The numerical results show that the binding energy of two donors increase, attains a maximum value, and then decreases as the quantum dot radius increases for any electric field. Moreover, the binding energy of two donors increases with the pressure for any size of dot. Our results are compared with existing literature.
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静水压力和外加电场对应变锌闪锌矿GaN/AlGaN量子点中两个供体能谱的同时影响
在静水压力和外加电场的影响下,研究了嵌入Al \(_x\) Ga \(_{1-x}\) N中的应变GaN量子点的能谱。我们的计算采用变分原理,在单波段有效质量近似下,通过点半径、静水压力和电场进行。数值结果表明,在任意电场下,随着量子点半径的增大,两个给体的结合能先增大,达到最大值,然后减小。此外,对于任意尺寸的点,两个给体的结合能随压力的增大而增大。我们的结果与现有文献进行了比较。
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