Pub Date : 2020-04-30DOI: 10.26713/JAMCNP.V7I1.1391
Shivani Chaudhary, Narinder Kumar, Devesh Kumar
An investigation of the interaction of 5CB and 6CB liquid crystals along with their dimer configurations in different conformations. The total energy, thermal energy, HOMO-LUMO Gap, dipole moment, polarizability, constant volume heat capacity, entropy, zero-point energy (ZPE), and enthalpy of the different configurations of 5CB and 6CB liquid crystal dimers are affected during the molecular interaction. The different interaction properties of 5CB, 6CB, and 5CB-6CB dimers studied in parallel and antiparallel conformation with the help of density functional theory method lc-blyp by NWChem software package. The 5CB and 6CB liquid crystal dimers have the least dipole moment and negative entropy in the antiparallel conformation. The cross conformation of 5CB liquid crystal dimer (5CB-5CB) has the least isotropic polarizability; however, the parallel conformation of 5CB liquid crystal dimer has the highest isotropic polarizability. The isotropic polarizability is minimum in the antiparallel conformation of 6CB liquid crystal dimer (6CB-6CB), while isotropic polarizability is maximum in the parallel conformation of 6CB liquid crystal dimer. The 5CB liquid crystal dimer and 6CB liquid crystal dimer have minimum negative interaction energy in the antiparallel conformation, but 5CB-6CB liquid crystal dimer has positive interaction energy for all the possible conformations.
{"title":"Comparative DFT Study of Parallel and Antiparallel Conformation of 5CB and 6CB Liquid Crystal Dimers","authors":"Shivani Chaudhary, Narinder Kumar, Devesh Kumar","doi":"10.26713/JAMCNP.V7I1.1391","DOIUrl":"https://doi.org/10.26713/JAMCNP.V7I1.1391","url":null,"abstract":"An investigation of the interaction of 5CB and 6CB liquid crystals along with their dimer configurations in different conformations. The total energy, thermal energy, HOMO-LUMO Gap, dipole moment, polarizability, constant volume heat capacity, entropy, zero-point energy (ZPE), and enthalpy of the different configurations of 5CB and 6CB liquid crystal dimers are affected during the molecular interaction. The different interaction properties of 5CB, 6CB, and 5CB-6CB dimers studied in parallel and antiparallel conformation with the help of density functional theory method lc-blyp by NWChem software package. The 5CB and 6CB liquid crystal dimers have the least dipole moment and negative entropy in the antiparallel conformation. The cross conformation of 5CB liquid crystal dimer (5CB-5CB) has the least isotropic polarizability; however, the parallel conformation of 5CB liquid crystal dimer has the highest isotropic polarizability. The isotropic polarizability is minimum in the antiparallel conformation of 6CB liquid crystal dimer (6CB-6CB), while isotropic polarizability is maximum in the parallel conformation of 6CB liquid crystal dimer. The 5CB liquid crystal dimer and 6CB liquid crystal dimer have minimum negative interaction energy in the antiparallel conformation, but 5CB-6CB liquid crystal dimer has positive interaction energy for all the possible conformations.","PeriodicalId":239838,"journal":{"name":"Journal of Atomic, Molecular, Condensate and Nano Physics","volume":"447 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122150507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-04-30DOI: 10.26713/JAMCNP.V7I1.1389
Sirshak Dutta, J. Saha, S. Bhattacharyya, T. K. Mukherjee
Bound and resonance states of symmetric three-body exotic (pXX) negative atomic ions ((X=mu^{-}, pi^{-}, K^{-})) as well as exotic (ppX) positive molecular ions for total angular momentum (J=0), are studied in details under the framework of Stabilization method. The resonance states under consideration lie below (N=2) ionization threshold of the corresponding (pX) atom. The wave-function is expanded in correlated multi-exponent Hylleraas type basis set for explicit incorporation of (p)-(p), (mu)-(mu), (pi)-(pi) or (K)-(K) correlations. The methodology has been tested by estimating the parameters of the resonance states of ((pmumu)^{-}), ((ppmu)^{+}), ((ppipi)^{-}) and ((pppi)^{+}) and comparing with the results existing in the literature. The interparticle interactions for all the systems under consideration are purely Coulombic.
{"title":"Resonance States of Hadronic Three-Body Ions: Stabilization Method","authors":"Sirshak Dutta, J. Saha, S. Bhattacharyya, T. K. Mukherjee","doi":"10.26713/JAMCNP.V7I1.1389","DOIUrl":"https://doi.org/10.26713/JAMCNP.V7I1.1389","url":null,"abstract":"Bound and resonance states of symmetric three-body exotic (pXX) negative atomic ions ((X=mu^{-}, pi^{-}, K^{-})) as well as exotic (ppX) positive molecular ions for total angular momentum (J=0), are studied in details under the framework of Stabilization method. The resonance states under consideration lie below (N=2) ionization threshold of the corresponding (pX) atom. The wave-function is expanded in correlated multi-exponent Hylleraas type basis set for explicit incorporation of (p)-(p), (mu)-(mu), (pi)-(pi) or (K)-(K) correlations. The methodology has been tested by estimating the parameters of the resonance states of ((pmumu)^{-}), ((ppmu)^{+}), ((ppipi)^{-}) and ((pppi)^{+}) and comparing with the results existing in the literature. The interparticle interactions for all the systems under consideration are purely Coulombic.","PeriodicalId":239838,"journal":{"name":"Journal of Atomic, Molecular, Condensate and Nano Physics","volume":"56 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114028469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-04-30DOI: 10.26713/JAMCNP.V7I1.1392
M. Ansari, M. Rafat, A. Almohammedi, M. Husain
The present work deals with the simulation of electronic transport through a single dimensional carbon atoms chain device coupled to Graphene nanoribbons (GNR) electrodes. In order to observe electron transport in a more specific manner, applied voltage is regulated across an eight atoms long carbon chain resistor sandwiched between two identical semi-infinite semiconducting Armchair Graphene nanoribbon (AGNR) electrodes. The entire device is 2.06nm in length consisting of a 0.93nm long monoatomic carbon chain with eight carbon atoms coupled with two 1.13nm wide 7-AGNR electrodes. Nonequilibrium green’s function (NEGF) technique coupled with density functional theory (DFT) generally used to simulate electronic transport in such systems is employed. The experimental realization of stable carbon chain and 7-AGNR observed in past studies motivated us to link these two experimentally obtained carbon based materials and construct a device in order to investigate electron transport properties theoretically. Meanwhile, the continuous advancement in nanotechnology realization of such devices experimentally may be anticipated in near future, with which the authenticity of the present and other similar reported simulated results may be validated. In this device the current is calculated as a function of potential difference within the 0.0-2.5V range. The I-V curve exhibits a nonconducting region upto 0.81V, followed by steep rise in current magnitude to a maximum value 13.0 ¹A as in semiconductor diodes, involving non-linear characteristic curve displaying a sharp negative differential resistance (NDR) pattern, which is the main focus of our study. Nano devices displaying such unusual I/V characteristics have been considered for developing application oriented futuristic miniaturized devices.
{"title":"Appearance of Conducting Behavior in a One Dimensional Nano Resistor Identical to a Semiconductor Diode","authors":"M. Ansari, M. Rafat, A. Almohammedi, M. Husain","doi":"10.26713/JAMCNP.V7I1.1392","DOIUrl":"https://doi.org/10.26713/JAMCNP.V7I1.1392","url":null,"abstract":"The present work deals with the simulation of electronic transport through a single dimensional carbon atoms chain device coupled to Graphene nanoribbons (GNR) electrodes. In order to observe electron transport in a more specific manner, applied voltage is regulated across an eight atoms long carbon chain resistor sandwiched between two identical semi-infinite semiconducting Armchair Graphene nanoribbon (AGNR) electrodes. The entire device is 2.06nm in length consisting of a 0.93nm long monoatomic carbon chain with eight carbon atoms coupled with two 1.13nm wide 7-AGNR electrodes. Nonequilibrium green’s function (NEGF) technique coupled with density functional theory (DFT) generally used to simulate electronic transport in such systems is employed. The experimental realization of stable carbon chain and 7-AGNR observed in past studies motivated us to link these two experimentally obtained carbon based materials and construct a device in order to investigate electron transport properties theoretically. Meanwhile, the continuous advancement in nanotechnology realization of such devices experimentally may be anticipated in near future, with which the authenticity of the present and other similar reported simulated results may be validated. In this device the current is calculated as a function of potential difference within the 0.0-2.5V range. The I-V curve exhibits a nonconducting region upto 0.81V, followed by steep rise in current magnitude to a maximum value 13.0 ¹A as in semiconductor diodes, involving non-linear characteristic curve displaying a sharp negative differential resistance (NDR) pattern, which is the main focus of our study. Nano devices displaying such unusual I/V characteristics have been considered for developing application oriented futuristic miniaturized devices.","PeriodicalId":239838,"journal":{"name":"Journal of Atomic, Molecular, Condensate and Nano Physics","volume":"376 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115476110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-04-30DOI: 10.26713/JAMCNP.V7I1.1364
A. Wajid, A. Husain, S. Jabeen, A. Tauheed
Theoretical energy levels, wavelengths and transitions probabilities of six-times ionized cesium (Cs VII) are calculated using multi-configuration-Dirac-Hartree-Fock (MCDHF) method. The present calculations have been performed for the 5s(^2)5p, 5s(^2)6s, 5s(^2)5d, 5s5p(^2) configurations using the GRASP2018 package. The electron correlation effects, Breit interaction and quantum electro dynamic effects have been considered in the calculations.
{"title":"The Multi-configuration Dirac-Hartree-Fock Calculations for Cs VII","authors":"A. Wajid, A. Husain, S. Jabeen, A. Tauheed","doi":"10.26713/JAMCNP.V7I1.1364","DOIUrl":"https://doi.org/10.26713/JAMCNP.V7I1.1364","url":null,"abstract":"Theoretical energy levels, wavelengths and transitions probabilities of six-times ionized cesium (Cs VII) are calculated using multi-configuration-Dirac-Hartree-Fock (MCDHF) method. The present calculations have been performed for the 5s(^2)5p, 5s(^2)6s, 5s(^2)5d, 5s5p(^2) configurations using the GRASP2018 package. The electron correlation effects, Breit interaction and quantum electro dynamic effects have been considered in the calculations.","PeriodicalId":239838,"journal":{"name":"Journal of Atomic, Molecular, Condensate and Nano Physics","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132591938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-04-30DOI: 10.26713/JAMCNP.V7I1.1368
A. Oluwaseun, Akinlade Johnson Adetunji, Busari Debora Ibironke, Adedeji Olufunke Lydia, I. T. Bello
Zinc Oxide (ZnO) and Aluminium doped Zinc Oxide (AZO) thin films are deposited on the glass slides by sol-gel spin coating technique. Zinc acetate dehydrate, 2 methoxyethanol, and diethanolamine are respectively used as a precursor, solvent, and stabilizer. Aluminium nitrate nonahydrate was used as the dopant source to obtain the atomic percentage of the dopant of 2%, 4%, 6% and 8%. The structural, optical, and electrical properties of the films were investigated using X-ray Diffraction (XRD), UV-visible spectrophotometry, and a Four-point probe technique respectively. The results from structural analyses show that the films are polycrystalline with a hexagonal wurtzite structure and a preferential orientation alongside the (c)-axis. The value obtained for the unit cell (a=3.020) A and (c= 5.108) A are in line with the reported literature. The transmittance of the films was observed within the visible region of the spectrum and the optical bandgap of the un-doped ZnO was established to be around 4.11 eV. However, the optical bandgap of the AZO films (4 and 6 at %) marginally decreases with doping concentration, which may be ascribed to the shrinkage of band effect due to the increase in carrier concentration. The lowest resistivity of (3.53times {10}^{-3},Omega) cm was observed for the doping concentration of 2% of Al. From the results, it was established that as the doping concentration increases, the thicknesses of the thin films were increased. Likewise, the increase in doping leads to a better uniformly distributed absorption spectra of the deposited AZO thin films.
采用溶胶-凝胶自旋镀膜技术在载玻片上制备了氧化锌(ZnO)和铝掺杂氧化锌(AZO)薄膜。脱水醋酸锌、2 -甲氧基乙醇和二乙醇胺分别用作前驱体、溶剂和稳定剂。以非水合硝酸铝为掺杂源，得到了掺杂剂2的原子百分数%, 4%, 6% and 8%. The structural, optical, and electrical properties of the films were investigated using X-ray Diffraction (XRD), UV-visible spectrophotometry, and a Four-point probe technique respectively. The results from structural analyses show that the films are polycrystalline with a hexagonal wurtzite structure and a preferential orientation alongside the (c)-axis. The value obtained for the unit cell (a=3.020) A and (c= 5.108) A are in line with the reported literature. The transmittance of the films was observed within the visible region of the spectrum and the optical bandgap of the un-doped ZnO was established to be around 4.11 eV. However, the optical bandgap of the AZO films (4 and 6 at %) marginally decreases with doping concentration, which may be ascribed to the shrinkage of band effect due to the increase in carrier concentration. The lowest resistivity of (3.53times {10}^{-3},Omega) cm was observed for the doping concentration of 2% of Al. From the results, it was established that as the doping concentration increases, the thicknesses of the thin films were increased. Likewise, the increase in doping leads to a better uniformly distributed absorption spectra of the deposited AZO thin films.
{"title":"On the Structural, Optical and Electrical Characterization of Zinc Oxide and Aluminium doped Zinc Oxide for Optoelectronic Applications","authors":"A. Oluwaseun, Akinlade Johnson Adetunji, Busari Debora Ibironke, Adedeji Olufunke Lydia, I. T. Bello","doi":"10.26713/JAMCNP.V7I1.1368","DOIUrl":"https://doi.org/10.26713/JAMCNP.V7I1.1368","url":null,"abstract":"Zinc Oxide (ZnO) and Aluminium doped Zinc Oxide (AZO) thin films are deposited on the glass slides by sol-gel spin coating technique. Zinc acetate dehydrate, 2 methoxyethanol, and diethanolamine are respectively used as a precursor, solvent, and stabilizer. Aluminium nitrate nonahydrate was used as the dopant source to obtain the atomic percentage of the dopant of 2%, 4%, 6% and 8%. The structural, optical, and electrical properties of the films were investigated using X-ray Diffraction (XRD), UV-visible spectrophotometry, and a Four-point probe technique respectively. The results from structural analyses show that the films are polycrystalline with a hexagonal wurtzite structure and a preferential orientation alongside the (c)-axis. The value obtained for the unit cell (a=3.020) A and (c= 5.108) A are in line with the reported literature. The transmittance of the films was observed within the visible region of the spectrum and the optical bandgap of the un-doped ZnO was established to be around 4.11 eV. However, the optical bandgap of the AZO films (4 and 6 at %) marginally decreases with doping concentration, which may be ascribed to the shrinkage of band effect due to the increase in carrier concentration. The lowest resistivity of (3.53times {10}^{-3},Omega) cm was observed for the doping concentration of 2% of Al. From the results, it was established that as the doping concentration increases, the thicknesses of the thin films were increased. Likewise, the increase in doping leads to a better uniformly distributed absorption spectra of the deposited AZO thin films.","PeriodicalId":239838,"journal":{"name":"Journal of Atomic, Molecular, Condensate and Nano Physics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129740951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-03-24DOI: 10.26713/JAMCNP.V7I1.1360
Sintayehu Mekonnen Hailemariam
Layered Boron-Nitride (BN) consist of covalent in-plane bonding with van der Waals (vdW) interlayer interactions between layers. In this study, stacking order, interlayer-interaction and layer number dependent structural and electronic properties of multi-layered BN were studied using Density Functional Theory (DFT). The lattice constant, equilibrium interlayer distance and energy band structures for different interlayer distances and the number of layers were computed. The calculated result indicates that interlayer interaction and stacking order in a multi-layer limit could impact on its structural and electronic properties. In addition to this, the calculated energy band structure for the increasing number of layers indicates that as the number of layers increases the bandgap decreases. However, the nature of the bandgap remains direct. Moreover, the Partial Density of State (PDOS) analysis reveals that many contributions of states in the vicinity of Fermi level derived from Boron p-orbital followed by nitrogen p-orbital. The findings are bases for experimentalist to control structural and electronic properties of layered materials by manipulating its stacking patterns and layer numbers.
{"title":"First Principle Investigation of Interlayer Interaction, Stacking Order and Layer Number Dependent Structural and Electronic Properties of Multi-Layered Boron Nitride (BN)","authors":"Sintayehu Mekonnen Hailemariam","doi":"10.26713/JAMCNP.V7I1.1360","DOIUrl":"https://doi.org/10.26713/JAMCNP.V7I1.1360","url":null,"abstract":"Layered Boron-Nitride (BN) consist of covalent in-plane bonding with van der Waals (vdW) interlayer interactions between layers. In this study, stacking order, interlayer-interaction and layer number dependent structural and electronic properties of multi-layered BN were studied using Density Functional Theory (DFT). The lattice constant, equilibrium interlayer distance and energy band structures for different interlayer distances and the number of layers were computed. The calculated result indicates that interlayer interaction and stacking order in a multi-layer limit could impact on its structural and electronic properties. In addition to this, the calculated energy band structure for the increasing number of layers indicates that as the number of layers increases the bandgap decreases. However, the nature of the bandgap remains direct. Moreover, the Partial Density of State (PDOS) analysis reveals that many contributions of states in the vicinity of Fermi level derived from Boron p-orbital followed by nitrogen p-orbital. The findings are bases for experimentalist to control structural and electronic properties of layered materials by manipulating its stacking patterns and layer numbers.","PeriodicalId":239838,"journal":{"name":"Journal of Atomic, Molecular, Condensate and Nano Physics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125207898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-12-31DOI: 10.26713/jamcnp.v6i3.1320
Ravindra Singh, Sandeep, Jaspreet Kaur
Electron injection for direct acceleration by a circularly polarized Gaussian laser field under the influence of azimuth magnetic field is studied. The electron energy gain, (gamma) versus electron's injection angle (delta) at different values laser intensity parameters and laser spot size shows the energy enhancement on increasing the parameters. For a small change in angle of injection then there appears a significant change in electron energy gain also for the variation of energy gain and magnetic field energy gain increases when value of (delta) $ is 8.5, 8.0, 13.5 and 13, respectively. It is observed that (delta) should be small and optimized for appropriate momentum to maximize the electron energy gain due to a relativistic longitudinal momentum and the variation of the scattering angle of the electron (theta) with respect to electron's injection angle (delta) in the presence of magnetic field shows a relatively lower scattering is observed with optimized values of injection angle in the presence of magnetic field.
{"title":"Electron Injection for Direct Acceleration by A Gaussian Laser Field Under the Influence of Azimuth Magnetic Field","authors":"Ravindra Singh, Sandeep, Jaspreet Kaur","doi":"10.26713/jamcnp.v6i3.1320","DOIUrl":"https://doi.org/10.26713/jamcnp.v6i3.1320","url":null,"abstract":"Electron injection for direct acceleration by a circularly polarized Gaussian laser field under the influence of azimuth magnetic field is studied. The electron energy gain, (gamma) versus electron's injection angle (delta) at different values laser intensity parameters and laser spot size shows the energy enhancement on increasing the parameters. For a small change in angle of injection then there appears a significant change in electron energy gain also for the variation of energy gain and magnetic field energy gain increases when value of (delta) $ is 8.5, 8.0, 13.5 and 13, respectively. It is observed that (delta) should be small and optimized for appropriate momentum to maximize the electron energy gain due to a relativistic longitudinal momentum and the variation of the scattering angle of the electron (theta) with respect to electron's injection angle (delta) in the presence of magnetic field shows a relatively lower scattering is observed with optimized values of injection angle in the presence of magnetic field.","PeriodicalId":239838,"journal":{"name":"Journal of Atomic, Molecular, Condensate and Nano Physics","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115573415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-02DOI: 10.26713/JAMCNP.V6I2.1242
D. Prasanna, P. Elangovan
The energy spectrum of two donors in a strained GaN quantum dot embedded in Al(_x)Ga(_{1-x})N has been investigated under the influence of hydrostatic pressure and external electric field. Our calculations are carried out using variational principle within the single band effective mass approximation by means of dot radius, hydrostatic pressure, and electric field. The numerical results show that the binding energy of two donors increase, attains a maximum value, and then decreases as the quantum dot radius increases for any electric field. Moreover, the binding energy of two donors increases with the pressure for any size of dot. Our results are compared with existing literature.
在静水压力和外加电场的影响下，研究了嵌入Al (_x) Ga (_{1-x}) N中的应变GaN量子点的能谱。我们的计算采用变分原理，在单波段有效质量近似下，通过点半径、静水压力和电场进行。数值结果表明，在任意电场下，随着量子点半径的增大，两个给体的结合能先增大，达到最大值，然后减小。此外，对于任意尺寸的点，两个给体的结合能随压力的增大而增大。我们的结果与现有文献进行了比较。
{"title":"Simultaneous Effects of Hydrostatic Pressure and External Electric Field on the Energy Spectra of Two Donors in a Strained Zinc Blende GaN/AlGaN Quantum Dot","authors":"D. Prasanna, P. Elangovan","doi":"10.26713/JAMCNP.V6I2.1242","DOIUrl":"https://doi.org/10.26713/JAMCNP.V6I2.1242","url":null,"abstract":"The energy spectrum of two donors in a strained GaN quantum dot embedded in Al(_x)Ga(_{1-x})N has been investigated under the influence of hydrostatic pressure and external electric field. Our calculations are carried out using variational principle within the single band effective mass approximation by means of dot radius, hydrostatic pressure, and electric field. The numerical results show that the binding energy of two donors increase, attains a maximum value, and then decreases as the quantum dot radius increases for any electric field. Moreover, the binding energy of two donors increases with the pressure for any size of dot. Our results are compared with existing literature.","PeriodicalId":239838,"journal":{"name":"Journal of Atomic, Molecular, Condensate and Nano Physics","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116011236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-02DOI: 10.26713/JAMCNP.V6I2.1279
R. P. Singh, Sandeep, Jaspreet Kaur
We investigated electron acceleration by a chirped short intense laser pulse in presence of an external magnetic field. The retained electron energy is very high with frequency chirp on increasing the value of chirp parameter and constant value of laser intensity parameter. Also, the retained electron energy increases on increment of laser intensity parameter. A linear frequency chirp (omega (t ) =omega_0 (1-alpha t)t) was considered, here (omega _0) is the laser frequency at (z=0) and (alpha) is the frequency chirp parameter. On increasing the chirp parameters corresponding to the magnetic field with phase then the retained electron energy become so high. Also, we study the variation of the relativistic factor gamma ((gamma)) and the laser intensity parameter ((a _0 )); also the variation of the relativistic factor gamma (( gamma )) and the magnetic field ((b_0)) with different values of the phase, (phi=0), (pi /4) and (pi/2), respectively. As the time duration is increased the energy gain increased.
{"title":"Electron Acceleration by a Chirped Short Intense Laser Pulse in Presence of an External Axial Magnetic Field in Vacuum With Different Phase Values","authors":"R. P. Singh, Sandeep, Jaspreet Kaur","doi":"10.26713/JAMCNP.V6I2.1279","DOIUrl":"https://doi.org/10.26713/JAMCNP.V6I2.1279","url":null,"abstract":"We investigated electron acceleration by a chirped short intense laser pulse in presence of an external magnetic field. The retained electron energy is very high with frequency chirp on increasing the value of chirp parameter and constant value of laser intensity parameter. Also, the retained electron energy increases on increment of laser intensity parameter. A linear frequency chirp (omega (t ) =omega_0 (1-alpha t)t) was considered, here (omega _0) is the laser frequency at (z=0) and (alpha) is the frequency chirp parameter. On increasing the chirp parameters corresponding to the magnetic field with phase then the retained electron energy become so high. Also, we study the variation of the relativistic factor gamma ((gamma)) and the laser intensity parameter ((a _0 )); also the variation of the relativistic factor gamma (( gamma )) and the magnetic field ((b_0)) with different values of the phase, (phi=0), (pi /4) and (pi/2), respectively. As the time duration is increased the energy gain increased.","PeriodicalId":239838,"journal":{"name":"Journal of Atomic, Molecular, Condensate and Nano Physics","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116094064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-02DOI: 10.26713/JAMCNP.V6I2.1268
I. Sakho
Photoionization data of the trans-Fe element Rb({}^{2+}) are reported. Rydberg series 4s({}^{2})4p({}^{4})(({}^{1})D({}_{2})) n d and 4s({}^{2})4p({}^{4})(({}^{3})P({}_{1})) n d Rydberg series of Rb({}^{2+}) from the ({}^{2})P({}^circ)({}_{3})({}_{/})({}_{2}) ground state and the ({}^{2})P({}^circ)({}_{1/2}) metastable state of Rb({}^{2+}) converging respectively to the 4s({}^{2})4p({}^{4})(({}^{1})D({}_{2})) 4s({}^{2})4p({}^{4})(({}^{3})P({}_{1})) series limit in Rb({}^{3})({}^{+}) are considered. Calculations are performed in the framework of the Screening constant by unit nuclear charge (SCUNC) method. Accurate data are tabulated up to $n=40$. It is shown that the SCUNC analytical formulas reproduce with an excellent precision, recent ALS measurements of Macaluso et al. [ J. Phys. B: At. Mol. Opt. Phys. 49 (2016), 235002; 50 (2017), 119501)]. The energy deviations with respect to the ALS data are equal to 0.001 eV. New data are tabulated for (n=21-40).
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