P. Acquafredda, E. Bisceglie, D. Bottalico, R. Brescia, M. Brigida, G. Caliandro, M. Capitelli, G. Casamassima, T. Cassano, R. Celiberto, G. Cicala, V. Crismale, A. De Giacomo, O. De Pascale, C. Favuzzi, G. Ferraro, P. Fusco, F. Gargano, N. Giglietto, F. Giordano, C. Gorse, V. Laporta, S. Longo, F. Loparco, B. Marangelli, M. Mazziotta, N. Mirizzi, M. Muscarella, M. Nitti, A. Rainò, A. Romeo, G. Senesi, P. Spinelli, A. Valentini, G. Verrone
{"title":"Preliminary study on polycrystalline diamond films suitable for radiation detection","authors":"P. Acquafredda, E. Bisceglie, D. Bottalico, R. Brescia, M. Brigida, G. Caliandro, M. Capitelli, G. Casamassima, T. Cassano, R. Celiberto, G. Cicala, V. Crismale, A. De Giacomo, O. De Pascale, C. Favuzzi, G. Ferraro, P. Fusco, F. Gargano, N. Giglietto, F. Giordano, C. Gorse, V. Laporta, S. Longo, F. Loparco, B. Marangelli, M. Mazziotta, N. Mirizzi, M. Muscarella, M. Nitti, A. Rainò, A. Romeo, G. Senesi, P. Spinelli, A. Valentini, G. Verrone","doi":"10.1109/IWASI.2009.5184770","DOIUrl":null,"url":null,"abstract":"The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 µm thick having different grain size. Dark current-voltage (I–V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 3rd International Workshop on Advances in sensors and Interfaces","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWASI.2009.5184770","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 µm thick having different grain size. Dark current-voltage (I–V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.
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