Optimization of Non-Toxic Inorganic CsSnGeI3 Perovskite Solar Cell with TiO2 and CNTS Charge Transport Layers using SCAPS-1D

Ihsan Nawaz Khan, M. Noman, Shayan Tariq Jan
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Abstract

Perovskite solar cells (PSCs) have shown tremendous potential in photovoltaic (PV) technology over the last decade due to their outstanding optoelectronic properties and high power conversion efficiency (PCE) of more than 25%. PSCs, on the other hand, have stability and toxicity problems, which have hampered the development of this technology. Lead (Pb) is poisonous in perovskite materials and can be substituted by non-toxic materials such as tin (Sn), germanium (Ge), bismuth (Bi), and others. Furthermore, replacing organic cations in perovskite structures with inorganic ones aids in the resolution of PSC stability problems. Using SCAPS-1D, an all-inorganic lead-free cesium tin-germanium tri-iodide (CsSnGeI3) PSC with TiO2 electron transport layer (ETL) and Kesterite CNTS as hole transport layer (HTL) is numerically modelled and optimized. The device optimization of the PSC structure TiO2/CsSnGeI3/CNTS contributed to an increase in PCE of up to 4%. The modelling results showed that the PCE of the PSC structure is 27.21%, the open-circuit voltage (Voc) is 1.15V, the short-circuit current density (Jsc) is 27.69 mA/cm2, and the fill-factor (F.F) is 84.97%. Furthermore, the impact of temperature (K), defect density (Nt), and interface defects on PSC performance is thoroughly examined. This research delves into the numerical structure and device manufacturing factors for commercializing Pb-free cesium tin-germanium-based PSC technology.
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利用SCAPS-1D优化具有TiO2和CNTS电荷传输层的无机CsSnGeI3钙钛矿太阳能电池
在过去的十年中,钙钛矿太阳能电池(PSCs)由于其出色的光电性能和超过25%的高功率转换效率(PCE)而在光伏(PV)技术中显示出巨大的潜力。另一方面,聚苯乙烯复合材料的稳定性和毒性问题阻碍了该技术的发展。铅(Pb)在钙钛矿材料中是有毒的,可以用无毒的材料代替,如锡(Sn)、锗(Ge)、铋(Bi)等。此外,用无机阳离子取代钙钛矿结构中的有机阳离子有助于解决PSC的稳定性问题。采用SCAPS-1D对以TiO2电子传输层(ETL)和Kesterite碳纳米管作为空穴传输层(HTL)的全无机无铅铯锡-三碘化锗(CsSnGeI3) PSC进行了数值模拟和优化。通过对PSC结构TiO2/CsSnGeI3/CNTS的器件优化,PCE提高了4%。仿真结果表明,该结构的PCE为27.21%,开路电压(Voc)为1.15V,短路电流密度(Jsc)为27.69 mA/cm2,填充系数(F.F)为84.97%。此外,还研究了温度(K)、缺陷密度(Nt)和界面缺陷对PSC性能的影响。本研究探讨了无铅铯锡锗基PSC技术商业化的数值结构和器件制造因素。
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