Application of Thin Layer of Vanadium Oxide in Terahertz Range Devices

Abstract

The paper is concerned field of application of vanadium oxide (VOx) thin layer was proposed. It has a fast, reversible metal-insulator transition (MIT) between an insulating state and a conducting (metallic) state, at temperatures near to 68 C. The MIT in VOx is accompanied by significant changes in its electrical and optical properties which are spanning over several frequency domains from dc to microwave, terahertz (THz), infrared (IR), and visible radiation. The transition can be triggered by thermal, electrical, optical, and even strong THz fields. In this paper, the authors showed that VOx thin layer shows promising potential for switchable THz devices, bolometric THz devices and THz imager.