Pub Date : 2018-09-01DOI: 10.1109/apede.2018.8542193
S.K. Speransky, I. Rodionov, K. S. Speransky
Photonic devices can be comprehensively modeled on a computer because Maxvell's equations precisely describe propagation of electromagnetic waves in materials. We use FDTD algorithm to model wave propagation in 2D photonic crystals and to calculate bandgap maps. Programming model was carried out in an environment MATLAB. Their production is based on the following main processes: drawing of the softened glass glassware and waist. The sectional shape of the product and its size are determined by the geometry of the spinneret assembly, drawing speed, and the glass softening temperature.
{"title":"Calculation of Band Gaps in Photonic Crystals Using FDTD Algorithm","authors":"S.K. Speransky, I. Rodionov, K. S. Speransky","doi":"10.1109/apede.2018.8542193","DOIUrl":"https://doi.org/10.1109/apede.2018.8542193","url":null,"abstract":"Photonic devices can be comprehensively modeled on a computer because Maxvell's equations precisely describe propagation of electromagnetic waves in materials. We use FDTD algorithm to model wave propagation in 2D photonic crystals and to calculate bandgap maps. Programming model was carried out in an environment MATLAB. Their production is based on the following main processes: drawing of the softened glass glassware and waist. The sectional shape of the product and its size are determined by the geometry of the spinneret assembly, drawing speed, and the glass softening temperature.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"77 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121033110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542321
D. Terin, O. Belobrovaya, V. Galushka, V. Sidorov, V. Polyanskaya
The study of the formation of silicon nanowhiskers by the method of non-current two-step etching is presented in this paper. Silicon nanowhiskers were obtained on unirradiated single-crystal silicon and on irradiated γ-quantum substrates. At an etching time of 20 to 50 minutes, the length of nanowhiskers is independent of the radiation dose (with a diameter of 70 to 140 nm), however, with increasing etching time, the length of the nanowhiskers increases sharply with increasing radiation dose. The optical and structural properties of silicon nanowhiskers under the influence of gamma irradiation are discussed.
{"title":"Optical and Structural Properties of Silicon Nanowhiskers Under the Influence of γ-Irradiation","authors":"D. Terin, O. Belobrovaya, V. Galushka, V. Sidorov, V. Polyanskaya","doi":"10.1109/APEDE.2018.8542321","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542321","url":null,"abstract":"The study of the formation of silicon nanowhiskers by the method of non-current two-step etching is presented in this paper. Silicon nanowhiskers were obtained on unirradiated single-crystal silicon and on irradiated γ-quantum substrates. At an etching time of 20 to 50 minutes, the length of nanowhiskers is independent of the radiation dose (with a diameter of 70 to 140 nm), however, with increasing etching time, the length of the nanowhiskers increases sharply with increasing radiation dose. The optical and structural properties of silicon nanowhiskers under the influence of gamma irradiation are discussed.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126995755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542271
I. Nagai, V. Nagai, N.I. Tsigulev
Estimation of the influence of the transition resistance of electric arc on symmetry breaking of three-phase short circuits in electrical Cabinet design with voltage of 6-10 kV. The calculations of currents of short circuit is made for electric network with one-way power, where the system equivalentamount symmetric three-phase EMF source with a symmetric resistance on all three phases. It doesn't account for resistance of mutual induction. The contact resistance of electric arc made is active. Obtained an approximate analytical expression to determine the currents and voltages. It is established that for the calculation of short circuit currents in electrical Cabinet design possible resistance performance of electric arc as a linear resistance depending on the voltage drop across the arc column and current metal short circuit. Analysis of these dependencies allows us to conclude that the change in the modules of the phase currents does not exceed 11% of the setting current three phase metal short circuit when the voltage drops in the arc column is not more than 15% nominal phase-to-phase voltage of the installation.
{"title":"Asymmetry in Three-Phase Short Circuit Through Electric Arc in Electrical Installations with Voltage of 6-10 kV","authors":"I. Nagai, V. Nagai, N.I. Tsigulev","doi":"10.1109/APEDE.2018.8542271","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542271","url":null,"abstract":"Estimation of the influence of the transition resistance of electric arc on symmetry breaking of three-phase short circuits in electrical Cabinet design with voltage of 6-10 kV. The calculations of currents of short circuit is made for electric network with one-way power, where the system equivalentamount symmetric three-phase EMF source with a symmetric resistance on all three phases. It doesn't account for resistance of mutual induction. The contact resistance of electric arc made is active. Obtained an approximate analytical expression to determine the currents and voltages. It is established that for the calculation of short circuit currents in electrical Cabinet design possible resistance performance of electric arc as a linear resistance depending on the voltage drop across the arc column and current metal short circuit. Analysis of these dependencies allows us to conclude that the change in the modules of the phase currents does not exceed 11% of the setting current three phase metal short circuit when the voltage drops in the arc column is not more than 15% nominal phase-to-phase voltage of the installation.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115338746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542192
A. Lerer, G. Makeeva
Numerical techniques for modeling of THz devices based on graphene metasurfaces are developed by using rigorous mathematical models to solve the Maxwell's equations with electrodynamic boundary conditions simultaneously with a model of the graphene surface conductivity determined from the Kubo formula. The transmission coefficients of THz polarizers, based on the metasurfaces of rectangular graphene nanoribbons, depending on the frequency and angle of incidence for different values of the chemical potential were calculated for the THz frequency range. It is shown that 2D periodic arrays of graphene rectangular ribbons on the multilayer substrates containing the dielectric and graphene layers are electrically controlled absorbers at the surface plasmon-polariton resonance frequencies absorbing almost 100% of the energy incident on them in a wide range of THz frequencies.
{"title":"Reconfigurable Terahertz Polarizers and Absorbers Based on Graphene Metasurfaces","authors":"A. Lerer, G. Makeeva","doi":"10.1109/APEDE.2018.8542192","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542192","url":null,"abstract":"Numerical techniques for modeling of THz devices based on graphene metasurfaces are developed by using rigorous mathematical models to solve the Maxwell's equations with electrodynamic boundary conditions simultaneously with a model of the graphene surface conductivity determined from the Kubo formula. The transmission coefficients of THz polarizers, based on the metasurfaces of rectangular graphene nanoribbons, depending on the frequency and angle of incidence for different values of the chemical potential were calculated for the THz frequency range. It is shown that 2D periodic arrays of graphene rectangular ribbons on the multilayer substrates containing the dielectric and graphene layers are electrically controlled absorbers at the surface plasmon-polariton resonance frequencies absorbing almost 100% of the energy incident on them in a wide range of THz frequencies.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122199038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542202
A. Morozov, O. Morozov, A. Prokopenko, V. V. Fedotov
An industrial plant for intensive microwave heating of grain products has been developed. The installation operates at frequency of 915 MHz and microwave power up to 25 kW. The working chamber of the installation was designed in the form of coordinated load with the basic mode type and on the basis of a rectangular waveguide of increased cross-section. This design of the chamber made it possible to provide intensive heating of grain at a rate of more than 5 deg/sec. Completed tuning and research of the working chamber showed high efficiency of microwave energy transfer to the grain product. Studies of the operation of the plant at a high power level have shown the possibility of starch micronization in a grain product. To improve the performance of the installation and increase the degree of starch micronization, it is proposed to preheat the grain product with superheated steam. Conducted research on various modes of the unit with pre-heating showed an increase in the efficiency of starch micronization in a grain product and an increased plant performance.
{"title":"Microwave Defrosting Food in Russia: Prospects, Problems and Solutions","authors":"A. Morozov, O. Morozov, A. Prokopenko, V. V. Fedotov","doi":"10.1109/APEDE.2018.8542202","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542202","url":null,"abstract":"An industrial plant for intensive microwave heating of grain products has been developed. The installation operates at frequency of 915 MHz and microwave power up to 25 kW. The working chamber of the installation was designed in the form of coordinated load with the basic mode type and on the basis of a rectangular waveguide of increased cross-section. This design of the chamber made it possible to provide intensive heating of grain at a rate of more than 5 deg/sec. Completed tuning and research of the working chamber showed high efficiency of microwave energy transfer to the grain product. Studies of the operation of the plant at a high power level have shown the possibility of starch micronization in a grain product. To improve the performance of the installation and increase the degree of starch micronization, it is proposed to preheat the grain product with superheated steam. Conducted research on various modes of the unit with pre-heating showed an increase in the efficiency of starch micronization in a grain product and an increased plant performance.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129550894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542331
V.M. Pomykalov, V.V. Boronina, A. Savin, I. Nakrap
The results of the application of freely distributed software FreeFem++ for solving internal boundary value problems of electrodynamics by the finite element method are presented. To build graphical models, it is proposed to use the freely distributed 3D-editor Blender. Scripts have been developed to automate the calculation of electrodynamics characteristics of periodic structures with complex boundary surfaces using FreeFem++. The estimation of the accuracy of the eigenfrequency calculation based on the experimental data and in comparison with the commercial program Ansys HFSS showed high accuracy and efficiency of free software.
{"title":"Use of a Free Software to Solve Internal Boundary Problems of Electrodynamics with a Method of Finite Elements","authors":"V.M. Pomykalov, V.V. Boronina, A. Savin, I. Nakrap","doi":"10.1109/APEDE.2018.8542331","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542331","url":null,"abstract":"The results of the application of freely distributed software FreeFem++ for solving internal boundary value problems of electrodynamics by the finite element method are presented. To build graphical models, it is proposed to use the freely distributed 3D-editor Blender. Scripts have been developed to automate the calculation of electrodynamics characteristics of periodic structures with complex boundary surfaces using FreeFem++. The estimation of the accuracy of the eigenfrequency calculation based on the experimental data and in comparison with the commercial program Ansys HFSS showed high accuracy and efficiency of free software.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128331697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/apede.2018.8542368
O. A. Gorlin, V. Fedyaev
Numerical calculations of electronic processes are presented in multi-resonator of - and 0 oscillations. Using the EXPRAN program, which was founded on nonlinear numerical- analytical model, it was conducted a study of electronic processes for resonators which have from 3 to 8 gaps. The main regularities of energy conversion in oscillators have been installed. Also geometrical size and electrical parameters have been optimized for getting maximum electronic efficiency. There was shown the possibility to get electronic efficiency to 98% on the 8-gaps resonator at 0-type oscillations. The results of calculations showed the possibility of creating the highly efficient oscillators on multi-gaps resonators of terahertz range.
{"title":"The Oscillator of Terahertz Range on the Basis of Multi Gap Resonators","authors":"O. A. Gorlin, V. Fedyaev","doi":"10.1109/apede.2018.8542368","DOIUrl":"https://doi.org/10.1109/apede.2018.8542368","url":null,"abstract":"Numerical calculations of electronic processes are presented in multi-resonator of - and 0 oscillations. Using the EXPRAN program, which was founded on nonlinear numerical- analytical model, it was conducted a study of electronic processes for resonators which have from 3 to 8 gaps. The main regularities of energy conversion in oscillators have been installed. Also geometrical size and electrical parameters have been optimized for getting maximum electronic efficiency. There was shown the possibility to get electronic efficiency to 98% on the 8-gaps resonator at 0-type oscillations. The results of calculations showed the possibility of creating the highly efficient oscillators on multi-gaps resonators of terahertz range.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128673411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542325
A. Baikov, O. Baikova
The bunching process, named Core Oscillation Method (COM), was presented in [1-3]. It provide to achieve the efficiency of klystrons about 90% by the optimization named «stage-by-stage» optimization. However, COM-bunching require the increasing of bunching length, so the increasing of klystron length. It of a significant problem for low-frequency klystrons. The Core Stabilization bunching Method (CSM) is proposed as a alternative bunching process, providing a high efficiency with decreased bunching length. Such kind of bunching requires the 2-nd and 3-rd harmonic cavities. For synthesis of high efficiency CSM klystrons, the «embedding» optimization method was proposed. CSM-klystrons, obtained by the embedding optimization method, proposed to achieve the efficiency about 90% with length decreased 2-3 times vs COM klystrons.
{"title":"On the Synthesis of High-Efficiency CSM Klystrons by the «Embedding» Method","authors":"A. Baikov, O. Baikova","doi":"10.1109/APEDE.2018.8542325","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542325","url":null,"abstract":"The bunching process, named Core Oscillation Method (COM), was presented in [1-3]. It provide to achieve the efficiency of klystrons about 90% by the optimization named «stage-by-stage» optimization. However, COM-bunching require the increasing of bunching length, so the increasing of klystron length. It of a significant problem for low-frequency klystrons. The Core Stabilization bunching Method (CSM) is proposed as a alternative bunching process, providing a high efficiency with decreased bunching length. Such kind of bunching requires the 2-nd and 3-rd harmonic cavities. For synthesis of high efficiency CSM klystrons, the «embedding» optimization method was proposed. CSM-klystrons, obtained by the embedding optimization method, proposed to achieve the efficiency about 90% with length decreased 2-3 times vs COM klystrons.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124242961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542233
A. Funtov
A linear theory of the interaction of an electron beam with fields of media with complex conductivity in crossed static electric and magnetic fields is presented. The flux flies between two flat surfaces, generally having complex conductivity. The models of an infinite thin beam and a beam of finite thickness are investigated. The noise coefficient for a lamp on an M-type absorption with a beam of finite thickness is estimated.
{"title":"Linear Theory of M-Type Amplifier on Absorption (Amplification and Noise)","authors":"A. Funtov","doi":"10.1109/APEDE.2018.8542233","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542233","url":null,"abstract":"A linear theory of the interaction of an electron beam with fields of media with complex conductivity in crossed static electric and magnetic fields is presented. The flux flies between two flat surfaces, generally having complex conductivity. The models of an infinite thin beam and a beam of finite thickness are investigated. The noise coefficient for a lamp on an M-type absorption with a beam of finite thickness is estimated.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121061995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542330
M. S. Svetlov, A. L’vov, D. Mishchenko, N. S. Vagarina
The paper presents the mathematical model of information and communication networks. At creation of any information network one of main are problems of receiving, preprocessing and distribution of information for the purpose of development of some managements of both local, and remote objects. At a large number of objects (terminals) the network uses multiple branched communication channels. At creation of such network by all means there are problems of rational use of channels. For the solution of these tasks it is necessary to have not only information on quantity of objects, geographical structure of their position, but also on functional features of information exchange between objects in system.
{"title":"Mathematical Model of Information and Communication Networks","authors":"M. S. Svetlov, A. L’vov, D. Mishchenko, N. S. Vagarina","doi":"10.1109/APEDE.2018.8542330","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542330","url":null,"abstract":"The paper presents the mathematical model of information and communication networks. At creation of any information network one of main are problems of receiving, preprocessing and distribution of information for the purpose of development of some managements of both local, and remote objects. At a large number of objects (terminals) the network uses multiple branched communication channels. At creation of such network by all means there are problems of rational use of channels. For the solution of these tasks it is necessary to have not only information on quantity of objects, geographical structure of their position, but also on functional features of information exchange between objects in system.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126273585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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