A 2.5 GHz low phase noise LC VCO in 0.35μm SiGe BiCMOS technology

B. Han, Jianhui Wu, Chen Hu
{"title":"A 2.5 GHz low phase noise LC VCO in 0.35μm SiGe BiCMOS technology","authors":"B. Han, Jianhui Wu, Chen Hu","doi":"10.1109/ICASIC.2007.4415689","DOIUrl":null,"url":null,"abstract":"A fully integrated low phase noise LC VCO with tail resistor for current control is presented using 0.35 mum SiGe BiCMOS technology. The structure is used to reduce noise of tail current source. The VCO has a tuning range of 480 MHz, from 2.32 GHz to 2.8 GHz and achieves low phase noise of -104.3 dBc/Hz and -124.3 dBc/Hz at 100 kHz and 1 MHz offset frequency from 2.5 GHz carrier. The oscillator draws 5 mA from 5 V supply voltage. The figure-of-merit (FOM) value at 2.5 GHz is around -178 dBc/Hz at the offset frequency of 100 kHz.","PeriodicalId":120984,"journal":{"name":"2007 7th International Conference on ASIC","volume":"148 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASIC.2007.4415689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A fully integrated low phase noise LC VCO with tail resistor for current control is presented using 0.35 mum SiGe BiCMOS technology. The structure is used to reduce noise of tail current source. The VCO has a tuning range of 480 MHz, from 2.32 GHz to 2.8 GHz and achieves low phase noise of -104.3 dBc/Hz and -124.3 dBc/Hz at 100 kHz and 1 MHz offset frequency from 2.5 GHz carrier. The oscillator draws 5 mA from 5 V supply voltage. The figure-of-merit (FOM) value at 2.5 GHz is around -178 dBc/Hz at the offset frequency of 100 kHz.
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采用0.35μm SiGe BiCMOS技术的2.5 GHz低相位噪声LC压控振荡器
采用0.35 μ SiGe BiCMOS技术,设计了一种带尾电阻的全集成低相位噪声LC压控振荡器。该结构用于降低尾电流源的噪声。VCO的调谐范围为480mhz,从2.32 GHz到2.8 GHz,在100 kHz和2.5 GHz载波的1 MHz偏移频率下可实现-104.3 dBc/Hz和-124.3 dBc/Hz的低相位噪声。振荡器从5v电源电压中吸取5ma。在偏移频率为100 kHz时,2.5 GHz时的质量因数(FOM)值约为-178 dBc/Hz。
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