R. Zhan, H. Feng, Qiong Wu, X. Guan, Guang Chen, Haolu Xie, Albert Z. H. Wang
{"title":"Concept and extraction method of ESD-critical parameters for function-based layout-level ESD protection circuit design verification","authors":"R. Zhan, H. Feng, Qiong Wu, X. Guan, Guang Chen, Haolu Xie, Albert Z. H. Wang","doi":"10.1109/ASPDAC.2004.1337685","DOIUrl":null,"url":null,"abstract":"On-chip ESD (electrostatic discharging) protection is a challenging IC design problem New CAD tools are essential to ESD protection design prediction and verification at full chip level. This paper reports a novel concept and extraction method of ESD-critical parameters for function-based layout-level ESD protection circuit design verification, which has been used to develop the first intelligent CAD tool of such kind. Design examples in 0.35μm BiCMOS are presented.","PeriodicalId":426349,"journal":{"name":"ASP-DAC 2004: Asia and South Pacific Design Automation Conference 2004 (IEEE Cat. No.04EX753)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASP-DAC 2004: Asia and South Pacific Design Automation Conference 2004 (IEEE Cat. No.04EX753)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.2004.1337685","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
On-chip ESD (electrostatic discharging) protection is a challenging IC design problem New CAD tools are essential to ESD protection design prediction and verification at full chip level. This paper reports a novel concept and extraction method of ESD-critical parameters for function-based layout-level ESD protection circuit design verification, which has been used to develop the first intelligent CAD tool of such kind. Design examples in 0.35μm BiCMOS are presented.
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