Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs

Abstract

In this paper, we reported a supercritical treatment technology to suppress the positive shift in threshold voltage. After treatment, threshold voltage shift ($\triangle$ Vth) under forward gate bias stress decreased from 4.05V to 0.15V, gate leakage current was reduced from 10-9mA/mm to 10-11mA/mm. It was suggested that nitrogen ions could modify interface state traps with a broad distribution of trapping, leading to suppressed gate leakage current and threshold voltage drifts.