T. Nitta, T. Minato, M. Yano, A. Uenisi, M. Harada, S. Hine
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引用次数: 51
Abstract
We propose a new structure of power MOSFET, i.e. Super Trench power MOSFET (STM). Instead of a conventional n-drift layer, STM has vertical P and N layers formed within mesa regions between adjacent trenches filled with insulator. The P and N stripe structure relaxes the electric field in off-state and makes possible a lower specific on-resistance (Ron, sp) than that of the conventional MOSFET. We fabricated a 250 V STM for the first time with only one additional mask over the conventional DMOS process, and the measured data show high breakdown voltage with highly doped n drift layer. The device simulation results show it should be possible to lower the Ron, sp to 5 m/spl Omega/cm/sup 2/ for a breakdown voltage of 300 V.
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