Simulation of a n-p-n-p silicon multilayer solar cell

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. Pub Date : 2004-12-06 DOI:10.1109/ICM.2004.1434718

A. Bouzidi, A. Bouazzi, B. Rezig

引用次数: 3

Abstract

In this work, we simulate and optimize the photocurrent densities in a model of an n-p-n-p type thin film multilayer silicon solar cell. The equations giving the photocurrent density produced in each abscissa of the structure was developed. We used Matlab software to simulate and optimize the different parameters of the model. The results of simulation show that the optimized n-p-n-p silicon multilayer solar cell could deliver a photocurrent density of more than 47 mA/cm/sup 2/. We also show that the most important components of the total photocurrent densities are due to the minority carrier collection which happens on both side of the three space charge regions tailored inside the cell.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

n-p-n-p硅多层太阳能电池的模拟

在这项工作中，我们模拟和优化了n-p-n-p型薄膜多层硅太阳能电池模型中的光电流密度。建立了给出结构各横坐标产生的光电流密度的方程。我们使用Matlab软件对模型的不同参数进行仿真和优化。仿真结果表明，优化后的n-p-n-p硅多层太阳能电池的光电流密度可超过47 mA/cm/sup 2/。我们还表明，总光电流密度的最重要组成部分是由于发生在电池内部定制的三个空间电荷区域两侧的少数载流子收集。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.

自引率

0.00%

发文量

期刊最新文献

CMOS versus SiGe BiCMOS: historical technology bipolarization of silicon integrated transceivers Design considerations of a high frequency and low voltage clock generator Parallel FPGA implementation of self-organizing maps A systematic approach for design of the IF and base-band of a low-IF GSM receiver Body effect principle applied to RF CMOS circuits