Pub Date : 2004-12-06DOI: 10.1109/ICM.2004.1434588
M. Taherzadeh‐Sani, A. Abbasian, B. Amelifard, A. Afzali-Kusha
In this paper, a new approach to model the I-V characteristic of MOSFETs, which considers the required accuracy of the goal model, is presented. The approach utilizes a combination of genetic algorithm and simulated annealing to determine the simplest model with a specific accuracy. While the genetic algorithm determines which terms should be used in the model, the simulated annealing determines the coefficient values related to each term in the I-V characteristic of MOSFFT model. For a desired accuracy considered here, the accuracy of the results predicted by our model are within 3.1%, for PMOS, and 1.3%, for NMOS, of the results of BSIM3v3 model with much less complexity.
{"title":"MOS compact I-V modeling with variable accuracy based on genetic algorithm and simulated annealing","authors":"M. Taherzadeh‐Sani, A. Abbasian, B. Amelifard, A. Afzali-Kusha","doi":"10.1109/ICM.2004.1434588","DOIUrl":"https://doi.org/10.1109/ICM.2004.1434588","url":null,"abstract":"In this paper, a new approach to model the I-V characteristic of MOSFETs, which considers the required accuracy of the goal model, is presented. The approach utilizes a combination of genetic algorithm and simulated annealing to determine the simplest model with a specific accuracy. While the genetic algorithm determines which terms should be used in the model, the simulated annealing determines the coefficient values related to each term in the I-V characteristic of MOSFFT model. For a desired accuracy considered here, the accuracy of the results predicted by our model are within 3.1%, for PMOS, and 1.3%, for NMOS, of the results of BSIM3v3 model with much less complexity.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116640738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-06DOI: 10.1109/ICM.2004.1434266
T. Fortaki, A. Benghalia
In this work, the influence of uniaxial anisotropy in the substrate on radiation pattern of a rectangular microstrip patch is investigated using an integral equation formulation. The proposed method for determining the Green's function leads to a concise form of this, diagonalized in the (TM,TE) representation. The stationary phase method is used for computing the far zone field. Numerical results for the effects of uniaxial anisotropy in the substrate on the radiation of the rectangular microstrip structure are presented. A comparison between the radiation of the first two fundamental modes TM/sub 10/ and TM/sub 01/ is also given.
{"title":"Efficient analysis of the far field pattern of rectangular microstrip patch using the stationary phase method","authors":"T. Fortaki, A. Benghalia","doi":"10.1109/ICM.2004.1434266","DOIUrl":"https://doi.org/10.1109/ICM.2004.1434266","url":null,"abstract":"In this work, the influence of uniaxial anisotropy in the substrate on radiation pattern of a rectangular microstrip patch is investigated using an integral equation formulation. The proposed method for determining the Green's function leads to a concise form of this, diagonalized in the (TM,TE) representation. The stationary phase method is used for computing the far zone field. Numerical results for the effects of uniaxial anisotropy in the substrate on the radiation of the rectangular microstrip structure are presented. A comparison between the radiation of the first two fundamental modes TM/sub 10/ and TM/sub 01/ is also given.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115192745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-06DOI: 10.1109/ICM.2004.1434714
N. Dehaese, S. Bourdel
This paper presents a simple system model for the 802.15.4 new standard dedicated to low-cost SOC-RF. Nonlinearities, receiver noise, channel imperfections, phase noise of the local oscillator (LO) are considered in this model. As we used complex envelope representation for analog part, the proposed model is efficient in terms of simulation time. Simulation results of a system described by this model are also presented.
{"title":"System modeling for 802.15.4 RF architectures","authors":"N. Dehaese, S. Bourdel","doi":"10.1109/ICM.2004.1434714","DOIUrl":"https://doi.org/10.1109/ICM.2004.1434714","url":null,"abstract":"This paper presents a simple system model for the 802.15.4 new standard dedicated to low-cost SOC-RF. Nonlinearities, receiver noise, channel imperfections, phase noise of the local oscillator (LO) are considered in this model. As we used complex envelope representation for analog part, the proposed model is efficient in terms of simulation time. Simulation results of a system described by this model are also presented.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116212557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-06DOI: 10.1109/ICM.2004.1434781
Z. Ahmed, R. Mehboob, S. A. Khan, H. Jamal
This paper proposes a hierarchical secure mobile ad hoc network architecture with mobile backbone nodes. The two challenges addressed here are the optimum connectivity and the provision of central command and control to secure mobile ad hoc network for a survivable system in the presence of malicious nodes. A GPS aware secure mobile ad hoc network architecture is presented, where mobile backbone nodes form the clusters' center and act as an authentication authority for all the cluster nodes. The mobile backbone nodes authenticate their cluster nodes by public key infrastructure and dynamically update their positions with topological changes caused by nodes' motion, nodes' failure and nodes' insertion. The motion of cluster center provides optimal connectivity with respect to line of sight, power and SNR. The scenarios that motivate this research include military applications requiring systematic and coordinated movement of troops in battlefields.
{"title":"Dynamic mission critical network for mobile system","authors":"Z. Ahmed, R. Mehboob, S. A. Khan, H. Jamal","doi":"10.1109/ICM.2004.1434781","DOIUrl":"https://doi.org/10.1109/ICM.2004.1434781","url":null,"abstract":"This paper proposes a hierarchical secure mobile ad hoc network architecture with mobile backbone nodes. The two challenges addressed here are the optimum connectivity and the provision of central command and control to secure mobile ad hoc network for a survivable system in the presence of malicious nodes. A GPS aware secure mobile ad hoc network architecture is presented, where mobile backbone nodes form the clusters' center and act as an authentication authority for all the cluster nodes. The mobile backbone nodes authenticate their cluster nodes by public key infrastructure and dynamically update their positions with topological changes caused by nodes' motion, nodes' failure and nodes' insertion. The motion of cluster center provides optimal connectivity with respect to line of sight, power and SNR. The scenarios that motivate this research include military applications requiring systematic and coordinated movement of troops in battlefields.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116564941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-06DOI: 10.1109/ICM.2004.1434238
T. Fortaki, A. Benghalia
In this communication, Galerkin's method in the Fourier transform domain is applied to the determination of the resonant frequencies of rectangular microstrip patch over ground plane with rectangular aperture when there is a high-permittivity dielectric layer below the aperture. The numerical calculations show that the results obtained for the resonant frequencies of the patches with apertures in contact with a high-permittivity dielectric layer not only substantially differ from the results without apertures, but they also appreciably differ from the results obtained with apertures in contact with air. Unlike microstrip patch resonators without apertures, the resonant frequency does not vary monotonically with increasing substrate thickness.
{"title":"Study of rectangular microstrip patch over ground plane with rectangular aperture in the presence of a high-permittivity dielectric layer below the aperture","authors":"T. Fortaki, A. Benghalia","doi":"10.1109/ICM.2004.1434238","DOIUrl":"https://doi.org/10.1109/ICM.2004.1434238","url":null,"abstract":"In this communication, Galerkin's method in the Fourier transform domain is applied to the determination of the resonant frequencies of rectangular microstrip patch over ground plane with rectangular aperture when there is a high-permittivity dielectric layer below the aperture. The numerical calculations show that the results obtained for the resonant frequencies of the patches with apertures in contact with a high-permittivity dielectric layer not only substantially differ from the results without apertures, but they also appreciably differ from the results obtained with apertures in contact with air. Unlike microstrip patch resonators without apertures, the resonant frequency does not vary monotonically with increasing substrate thickness.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130578165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-06DOI: 10.1109/ICM.2004.1434583
H. Boussctta, M. Abid, F. Layouni, C. Pistrito
SystemC 2.0 facilitates the development of transaction level models (TLM) that are models of the hardware system components at a high level of abstraction. System architects can quickly develop these models and be ready with an executable specification of the hardware blocks as soon as the initial functional specifications of the system are decided. In this paper, we present a SystemC 2.0 TLM of the STBus architecture developed by STMicroelectronics, oriented to SOC platform architectures, by focusing on the advantages and limits of this abstraction level. Then, we propose a solution to these limits.
{"title":"STBus transaction level models using SystemC 2.0","authors":"H. Boussctta, M. Abid, F. Layouni, C. Pistrito","doi":"10.1109/ICM.2004.1434583","DOIUrl":"https://doi.org/10.1109/ICM.2004.1434583","url":null,"abstract":"SystemC 2.0 facilitates the development of transaction level models (TLM) that are models of the hardware system components at a high level of abstraction. System architects can quickly develop these models and be ready with an executable specification of the hardware blocks as soon as the initial functional specifications of the system are decided. In this paper, we present a SystemC 2.0 TLM of the STBus architecture developed by STMicroelectronics, oriented to SOC platform architectures, by focusing on the advantages and limits of this abstraction level. Then, we propose a solution to these limits.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130602576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-06DOI: 10.1109/ICM.2004.1434742
D. Wiklund, S. Sathe, D. Liu
More complex on-chip interconnection structures such as networks on chip emerge today. As the number of interconnect architectures rises there is a need to do an impartial evaluation of the performance of the interconnect structure. This is important for both the designer of the interconnect as well as for the system designer in order to achieve best performance vs. cost tradeoff. The work presented in this paper describes a method to specify, execute, and evaluate benchmarks for on-chip interconnects. The benchmarking method uses formal traffic specifications together with architecture independent constraints to form the benchmark specification. This specification is adapted to the simulation flow available for the interconnect and simulated to get the wanted results. The benchmark method is evaluated using two related examples where throughput is the main focus in the results. These examples show the applicability of the method.
{"title":"Benchmarking of on-chip interconnection networks","authors":"D. Wiklund, S. Sathe, D. Liu","doi":"10.1109/ICM.2004.1434742","DOIUrl":"https://doi.org/10.1109/ICM.2004.1434742","url":null,"abstract":"More complex on-chip interconnection structures such as networks on chip emerge today. As the number of interconnect architectures rises there is a need to do an impartial evaluation of the performance of the interconnect structure. This is important for both the designer of the interconnect as well as for the system designer in order to achieve best performance vs. cost tradeoff. The work presented in this paper describes a method to specify, execute, and evaluate benchmarks for on-chip interconnects. The benchmarking method uses formal traffic specifications together with architecture independent constraints to form the benchmark specification. This specification is adapted to the simulation flow available for the interconnect and simulated to get the wanted results. The benchmark method is evaluated using two related examples where throughput is the main focus in the results. These examples show the applicability of the method.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123909070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-06DOI: 10.1109/ICM.2004.1434729
S. Bouridah, F. Mansour, R. Mahamdi, P. Temple-Boyer
The effects of thermal annealing conditions, and nitrogen tenor on the properties of nitrogen doped silicon films (NIDOS) deposited by low-pressure chemical vapor deposition (LPCVD) at low temperature (480/spl deg/C) from a mixture of disilane and ammonia are investigated. Two series of samples have been studied: boron doped NIDOS films and NIDOS films. The resistivity measurements and the scanning electron microscopy observations showed respectively, a conducting behavior and a polycrystalline structure of films at high temperature. The electrical characterization highlighted the improvement of NIDOS conductivity when the nitrogen content increases. Fourier transform spectrometry measurements revealed that nitrogen combines with the boron to form a B-N complex for boron doped NIDOS films. This complex is responsible of the increase of the resistivity values of boron doped NIDOS films when the nitrogen tenor increases. Results showed a good correlation between the electrical and the structural properties.
{"title":"Study of nitrogen doped silicon films used for p/sup +/ polysilicon gates","authors":"S. Bouridah, F. Mansour, R. Mahamdi, P. Temple-Boyer","doi":"10.1109/ICM.2004.1434729","DOIUrl":"https://doi.org/10.1109/ICM.2004.1434729","url":null,"abstract":"The effects of thermal annealing conditions, and nitrogen tenor on the properties of nitrogen doped silicon films (NIDOS) deposited by low-pressure chemical vapor deposition (LPCVD) at low temperature (480/spl deg/C) from a mixture of disilane and ammonia are investigated. Two series of samples have been studied: boron doped NIDOS films and NIDOS films. The resistivity measurements and the scanning electron microscopy observations showed respectively, a conducting behavior and a polycrystalline structure of films at high temperature. The electrical characterization highlighted the improvement of NIDOS conductivity when the nitrogen content increases. Fourier transform spectrometry measurements revealed that nitrogen combines with the boron to form a B-N complex for boron doped NIDOS films. This complex is responsible of the increase of the resistivity values of boron doped NIDOS films when the nitrogen tenor increases. Results showed a good correlation between the electrical and the structural properties.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123959231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-06DOI: 10.1109/ICM.2004.1434756
P. Obreja, D. Cristea, E. Budianu, R. Gavrila, M. Kusko, V. Kuncser
This paper presents experimental results concerning the influence of additives from a solution of the PVA on the optical properties of the polymer. The refractive index of the poly (vinyl-alcohol) was modified through the addition of inorganic materials and showed values between 1.5 and 2 depending on the compositions and the curing conditions of the polymer. The transmittance indicated values above 80%. The additives we used were metal oxides/inorganic salts. The composition and the deposition processes were optimized to allow a better control of the optical parameters (refractive index, transmittance), to reduce the processing temperatures and to improve photosensitivity. PVA with these new light-sensitive compositions can be easily spin coated onto variety of semiconductor substrate and directly patterned. A process was developed for channel waveguides fabrication.
{"title":"Poly (vinyl-alcohol) films for microphotonics","authors":"P. Obreja, D. Cristea, E. Budianu, R. Gavrila, M. Kusko, V. Kuncser","doi":"10.1109/ICM.2004.1434756","DOIUrl":"https://doi.org/10.1109/ICM.2004.1434756","url":null,"abstract":"This paper presents experimental results concerning the influence of additives from a solution of the PVA on the optical properties of the polymer. The refractive index of the poly (vinyl-alcohol) was modified through the addition of inorganic materials and showed values between 1.5 and 2 depending on the compositions and the curing conditions of the polymer. The transmittance indicated values above 80%. The additives we used were metal oxides/inorganic salts. The composition and the deposition processes were optimized to allow a better control of the optical parameters (refractive index, transmittance), to reduce the processing temperatures and to improve photosensitivity. PVA with these new light-sensitive compositions can be easily spin coated onto variety of semiconductor substrate and directly patterned. A process was developed for channel waveguides fabrication.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123443979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-06DOI: 10.1109/ICM.2004.1434602
H. Shamsi, O. Shoaei, Azadeh Zahabi, Y. Koolivand, R. Doost
A low voltage, 1.2 V, 4 GHz CMOS phase lock loop for clock generation is reported. This low voltage clock generator consists of a ring oscillator as the VCO that works from 100 MHz to 4 GHz with a maximum power consumption of 11 mW. Employing a charge pump circuit with suitable loop filter, a ripple free control voltage is provided for VCO. The total power consumption of this PLL, simulated in a 0.13 /spl mu/m CMOS technology, is about 54 mW.
{"title":"Design considerations of a high frequency and low voltage clock generator","authors":"H. Shamsi, O. Shoaei, Azadeh Zahabi, Y. Koolivand, R. Doost","doi":"10.1109/ICM.2004.1434602","DOIUrl":"https://doi.org/10.1109/ICM.2004.1434602","url":null,"abstract":"A low voltage, 1.2 V, 4 GHz CMOS phase lock loop for clock generation is reported. This low voltage clock generator consists of a ring oscillator as the VCO that works from 100 MHz to 4 GHz with a maximum power consumption of 11 mW. Employing a charge pump circuit with suitable loop filter, a ripple free control voltage is provided for VCO. The total power consumption of this PLL, simulated in a 0.13 /spl mu/m CMOS technology, is about 54 mW.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"59 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113973754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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