Zhilin Chen, Zhiqing Liu, Zhengdong Jiang, P. Liu, Huihua Liu, Yunqiu Wu, Chenxi Zhao, K. Kang
{"title":"A 27.5–43.5 GHz high linearity up-conversion CMOS mixer for 5G communication","authors":"Zhilin Chen, Zhiqing Liu, Zhengdong Jiang, P. Liu, Huihua Liu, Yunqiu Wu, Chenxi Zhao, K. Kang","doi":"10.1109/EDAPS.2017.8276931","DOIUrl":null,"url":null,"abstract":"A 27.5–43.5 GHz high linearity up-conversion mixer for 5G communication is designed and fabricated by standard 65 nm CMOS process. The mixer consists of a double balanced Gilbert cell and a linearized transconductance stage which is used to enhance the mixer linearity. In addition, based on the coupled resonators, the input and output baluns implement wide-band impedance matching. The mixer achieves IF-port input reflection coefficient less than −10 dB for frequency 9.7–17.8 GHz, and RF-port input reflection coefficient less than −10 dB for frequency 34.3 to 47.7 GHz. The conversion gain is −5 dB to −8 dB within 27.5–43.5 GHz. LO leakage to the IF port and RF port is less than −43 dB and −40 dB, respectively. The mixer realizes an output 1 dB compression point as high as 0.42 dBm at 38 GHz, while consuming 14 mW from a 1V supply.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2017.8276931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
A 27.5–43.5 GHz high linearity up-conversion mixer for 5G communication is designed and fabricated by standard 65 nm CMOS process. The mixer consists of a double balanced Gilbert cell and a linearized transconductance stage which is used to enhance the mixer linearity. In addition, based on the coupled resonators, the input and output baluns implement wide-band impedance matching. The mixer achieves IF-port input reflection coefficient less than −10 dB for frequency 9.7–17.8 GHz, and RF-port input reflection coefficient less than −10 dB for frequency 34.3 to 47.7 GHz. The conversion gain is −5 dB to −8 dB within 27.5–43.5 GHz. LO leakage to the IF port and RF port is less than −43 dB and −40 dB, respectively. The mixer realizes an output 1 dB compression point as high as 0.42 dBm at 38 GHz, while consuming 14 mW from a 1V supply.