Ning An, Guojun Liu, Zhipeng Wei, Rui Deng, X. Fang, Xian Gao, Y. Zou, Mei Li, Xiao-hui Ma
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引用次数: 2
Abstract
We here report a new passivation method, with neutral sulphur, (NH4)2S, to modify the GaSb surface. The optical and chemical properties of GaSb surface before and after neutral passivation are investigated using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) mapping. Neutral (NH4)2S passivation led to 20 times enhancement in photoluminescence (PL) intensity, lower oxide content, and a less amount of elemental Sb than the untreated sample. The passivtion effect results from the significant reduction in surface states due to the formation of Ga and Sb sulfide species. Compared to the regular alkaline (NH4)2S treatment, surface passivation intensity and homogeneity are both improved. Our studies also indicate the neutral sulphur passivation treated surface is much more stable in air for at least 48h.
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