{"title":"Behavior Modeling of Programmable Metallization Cell Using Verilog-A","authors":"Darshan A. Dimplu, Fei Wang","doi":"10.1109/ITNG.2012.107","DOIUrl":null,"url":null,"abstract":"Programmable metallization is a promising type of non-volatile memory that displays several advantages over the currently wide spread flash memory, such as higher writing speed, better scalability, and longer data retention period. The unique electrical behavior of programmable metallization cell has not been included in any popular EAD tools yet. Therefore, a behavior model of Programmable Metallization Cell is designed using Verilog-A language in this paper. This model can be easily imported into PSPICE to enhance circuit level design related to programmable metallization cell.","PeriodicalId":117236,"journal":{"name":"2012 Ninth International Conference on Information Technology - New Generations","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Ninth International Conference on Information Technology - New Generations","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITNG.2012.107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Programmable metallization is a promising type of non-volatile memory that displays several advantages over the currently wide spread flash memory, such as higher writing speed, better scalability, and longer data retention period. The unique electrical behavior of programmable metallization cell has not been included in any popular EAD tools yet. Therefore, a behavior model of Programmable Metallization Cell is designed using Verilog-A language in this paper. This model can be easily imported into PSPICE to enhance circuit level design related to programmable metallization cell.