GaN solar microinverter with only 4 low side devices

Abstract

This paper presents the analyses and design of a GaN device based differential-mode Cuk inverter (DMCI). The DMCI follows a hybrid modulation scheme (HMS) that introduces discontinuity in modulation or yields topological switching, which results in enhanced energy conversion efficiency. Owing to very small device capacitance and high dv/dt of GaN devices, it becomes crucial to limit the leakage inductance in gate drive path and power loops. In light of the above, detailed guidelines for component selection and magnetics design are provided. Experimental results for startup transient, steady state operation and load switching are provided to display the efficacy of the designed inverter.