Integrated Bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly

P. Lasserre, D.W.H. Lambert, A. Castellazzi
{"title":"Integrated Bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly","authors":"P. Lasserre, D.W.H. Lambert, A. Castellazzi","doi":"10.1109/WIPDA.2016.7799935","DOIUrl":null,"url":null,"abstract":"This paper presents an innovative device packaging and system integration approach aimed at optimizing the electro-thermal, electro-magnetic and thermo-mechanical performance of the switches in a power converter. In particular, the focus is on state-of-the-art commercially available silicon-carbide (SiC) power MOSFETs used within a matrix converter topology. The improvements at switch level over conventional packaging and integration solutions translate into higher efficiency, power density (in terms of volume and weight) and reliability at system level. In view of typical application domains (e.g., renewable energies, solid-state transformation, smart grids, electric transport), requiring harsh environment withstand capability with high reliability and availability levels, an AC-to-AC matrix converter is chosen as a particularly relevant case study. The paper also addresses two aspects of growing relevance: reliable manufacturability and preventive maintenance compatible modular system assembly for reduced impact of single component failure on system availability.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799935","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

Abstract

This paper presents an innovative device packaging and system integration approach aimed at optimizing the electro-thermal, electro-magnetic and thermo-mechanical performance of the switches in a power converter. In particular, the focus is on state-of-the-art commercially available silicon-carbide (SiC) power MOSFETs used within a matrix converter topology. The improvements at switch level over conventional packaging and integration solutions translate into higher efficiency, power density (in terms of volume and weight) and reliability at system level. In view of typical application domains (e.g., renewable energies, solid-state transformation, smart grids, electric transport), requiring harsh environment withstand capability with high reliability and availability levels, an AC-to-AC matrix converter is chosen as a particularly relevant case study. The paper also addresses two aspects of growing relevance: reliable manufacturability and preventive maintenance compatible modular system assembly for reduced impact of single component failure on system availability.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
集成双向SiC MOSFET功率开关,用于高效,功率密集和可靠的矩阵变换器组件
本文提出了一种创新的器件封装和系统集成方法,旨在优化电源变换器中开关的电热、电磁和热机械性能。特别是,重点是在矩阵转换器拓扑结构中使用的最先进的商用碳化硅(SiC)功率mosfet。与传统封装和集成解决方案相比,开关级的改进转化为更高的效率、功率密度(就体积和重量而言)和系统级的可靠性。鉴于典型的应用领域(如可再生能源、固态转换、智能电网、电力运输)需要具有高可靠性和可用性水平的恶劣环境承受能力,选择交流-交流矩阵变换器作为特别相关的案例研究。本文还讨论了日益相关的两个方面:可靠的可制造性和预防性维护兼容的模块化系统组装,以减少单个组件故障对系统可用性的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
UIS failure mechanism of SiC power MOSFETs Integrated Bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions Impact of SiC technology in a three-port active bridge converter for energy storage integrated solid state transformer applications Impulse transformer based secondary-side self-powered gate-driver for wide-range PWM operation of SiC power MOSFETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1