{"title":"Progress in new materials for power electronics: SiC","authors":"R. Helbig","doi":"10.1109/ISPSD.1993.297097","DOIUrl":null,"url":null,"abstract":"Some general physical properties of the different polytopes of SiC are discussed. A complete set of parameters for 6H-SiC for the simulation of electronic devices is given. To demonstrate the simulation of devices, the p-n/sup -/n/sup +/ diode and the vertical power MOSFET made of 6H-SiC are discussed.<<ETX>>","PeriodicalId":223632,"journal":{"name":"[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs","volume":"520 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1993.297097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Some general physical properties of the different polytopes of SiC are discussed. A complete set of parameters for 6H-SiC for the simulation of electronic devices is given. To demonstrate the simulation of devices, the p-n/sup -/n/sup +/ diode and the vertical power MOSFET made of 6H-SiC are discussed.<>
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