A CMOS RF bandpass filter based on the active inductor

Zhiqiang Gao, Jianguo Ma, Mingyan Yu, Y. Ye
{"title":"A CMOS RF bandpass filter based on the active inductor","authors":"Zhiqiang Gao, Jianguo Ma, Mingyan Yu, Y. Ye","doi":"10.1109/ICASIC.2005.1611401","DOIUrl":null,"url":null,"abstract":"This paper presents a 6th order RF bandpass filter using low-voltage based on active inductor. In the filter, a design technique for a high-Q CMOS active inductor operating in the RF-band is described. Simulated performance presented is shown that the center frequency of filter using a 0.25-mum CMOS process can be operated at the 2.05-2.45 GHz frequency band under a 1.8V power supply and suitable for multiband wireless applications and RF system on-chip","PeriodicalId":431034,"journal":{"name":"2005 6th International Conference on ASIC","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 6th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASIC.2005.1611401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

Abstract

This paper presents a 6th order RF bandpass filter using low-voltage based on active inductor. In the filter, a design technique for a high-Q CMOS active inductor operating in the RF-band is described. Simulated performance presented is shown that the center frequency of filter using a 0.25-mum CMOS process can be operated at the 2.05-2.45 GHz frequency band under a 1.8V power supply and suitable for multiband wireless applications and RF system on-chip
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一种基于有源电感的CMOS射频带通滤波器
提出了一种基于有源电感的低压六阶射频带通滤波器。在滤波器中,描述了工作在射频波段的高q CMOS有源电感的设计技术。仿真结果表明,在1.8V电源下,采用0.25 μ m CMOS工艺的滤波器中心频率可工作在2.05 ~ 2.45 GHz频段,适用于多频段无线应用和片上射频系统
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