Glass carrier SOP technology demonstrated by design of a 19 GHz 3.8 dB CMOS LNA

Abstract

To demonstrate the capability of the System-on-Package concept for microwave design a 19 GHz low-power, low-noise amplifier in 0.13 µm CMOS is manufactured. A CMOS chip is flip-chip mounted on a glass carrier with integrated passive components. The LNA has a power gain of 7 dB, a 3.8 dB noise figure, and a IP1dB of −5.8 dBm at 19.2 GHz. The LNA consumes 5 mA from a 1.2 V supply.