M. Zhu, J.J. Wang, R. Outlaw, X. Zhao, B. Holloway, D. Manos, V. Mammana, M. Ray, O. Shenderova
{"title":"Carbon nanotubes field emitter and back-gated structure","authors":"M. Zhu, J.J. Wang, R. Outlaw, X. Zhao, B. Holloway, D. Manos, V. Mammana, M. Ray, O. Shenderova","doi":"10.1109/IVNC.2004.1354917","DOIUrl":null,"url":null,"abstract":"Carbon nanotubes (CNTs) were synthesized by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method on nanoscaled nickel particles as catalyst formed by both a nanosphere lithography (NSL) method and by a plasma pre-treatment of Ni layers on silicon substrates. These CNTs was studied as field emission materials using a novel triode structure for field emission device design by a back-gated structure. Field emission of this back-gated device was characterized using a triode I-V curve measurement.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2004.1354917","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Carbon nanotubes (CNTs) were synthesized by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method on nanoscaled nickel particles as catalyst formed by both a nanosphere lithography (NSL) method and by a plasma pre-treatment of Ni layers on silicon substrates. These CNTs was studied as field emission materials using a novel triode structure for field emission device design by a back-gated structure. Field emission of this back-gated device was characterized using a triode I-V curve measurement.