Carbon nanotubes field emitter and back-gated structure

M. Zhu, J.J. Wang, R. Outlaw, X. Zhao, B. Holloway, D. Manos, V. Mammana, M. Ray, O. Shenderova
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引用次数: 0

Abstract

Carbon nanotubes (CNTs) were synthesized by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method on nanoscaled nickel particles as catalyst formed by both a nanosphere lithography (NSL) method and by a plasma pre-treatment of Ni layers on silicon substrates. These CNTs was studied as field emission materials using a novel triode structure for field emission device design by a back-gated structure. Field emission of this back-gated device was characterized using a triode I-V curve measurement.
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碳纳米管场发射极和背门控结构
采用射频(RF)等离子体增强化学气相沉积(PECVD)方法,以纳米级镍颗粒为催化剂,通过纳米球光刻(NSL)法和等离子体预处理硅衬底上的镍层制备了碳纳米管(CNTs)。研究了这些碳纳米管作为场发射材料,采用一种新型三极管结构,通过背门控结构设计场发射器件。利用三极管I-V曲线测量方法对该背控器件的场发射特性进行了表征。
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