Jae-Hong Park, J. Moon, Jae-Hee Han, A. Berdinsky, J. Yoo, Chong-Yun Park
We prepared carbon nanotube (CNT) pastes with different inorganic binders such as glass frit and spin on glass (SOG). MWNT powders grown by CVD were used for electron emissive source. The three-roll mill process was carried out for mixing and dispersion of CNT powders in organic vehicle as polymer matrix. CNT paste was printed onto various substrates such as an indium thin oxide (ITO) coated soda lime glass and a nickel plate. Then CNT paste was sintered under different ambient and temperature. For the analysis of the surface morphology of the cathode layer, field-emission scanning electron microscopy (FESEM) was used. The FE characteristics of CNT paste were measured in a high vacuum chamber with a parallel diode type configuration at 5/spl times/10/sup -6/ Torr. We obtained stable and high emission current from CNT paste with SOG. Our experiments have shown that CNT paste with SOG can use as efficient electron emitter in vacuum nanoelectronics such as radio frequency amplifier, field emission display and X-ray tube.
{"title":"Stable and high emission current from carbon nanotube paste with spin on glass","authors":"Jae-Hong Park, J. Moon, Jae-Hee Han, A. Berdinsky, J. Yoo, Chong-Yun Park","doi":"10.1116/1.1880192","DOIUrl":"https://doi.org/10.1116/1.1880192","url":null,"abstract":"We prepared carbon nanotube (CNT) pastes with different inorganic binders such as glass frit and spin on glass (SOG). MWNT powders grown by CVD were used for electron emissive source. The three-roll mill process was carried out for mixing and dispersion of CNT powders in organic vehicle as polymer matrix. CNT paste was printed onto various substrates such as an indium thin oxide (ITO) coated soda lime glass and a nickel plate. Then CNT paste was sintered under different ambient and temperature. For the analysis of the surface morphology of the cathode layer, field-emission scanning electron microscopy (FESEM) was used. The FE characteristics of CNT paste were measured in a high vacuum chamber with a parallel diode type configuration at 5/spl times/10/sup -6/ Torr. We obtained stable and high emission current from CNT paste with SOG. Our experiments have shown that CNT paste with SOG can use as efficient electron emitter in vacuum nanoelectronics such as radio frequency amplifier, field emission display and X-ray tube.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114296124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In addition to displays, sensors, and microwave amplifiers, field emitters are being considered for x-ray generation. Published results describe carbon nanotube-based emitters nanocrystalline graphite, and silicon emitters [2] intended for relatively small size applications such as in catheters for restenosis treatment in cardiac arteries and for cancer therapy. Larger x-ray sources are¿also of great interest. for food sterilization, waste water treatment, homeland security, and others. By using carbon-based emitters similar to those described in, we are investigating xray sources with total emission areas approaching square meter sizes.
{"title":"X-ray generation from large area carbon-based field emitters","authors":"H. Busta, S. Lesiak, R. Myers, B. Zwicker","doi":"10.1116/1.1880172","DOIUrl":"https://doi.org/10.1116/1.1880172","url":null,"abstract":"In addition to displays, sensors, and microwave amplifiers, field emitters are being considered for x-ray generation. Published results describe carbon nanotube-based emitters nanocrystalline graphite, and silicon emitters [2] intended for relatively small size applications such as in catheters for restenosis treatment in cardiac arteries and for cancer therapy. Larger x-ray sources are¿also of great interest. for food sterilization, waste water treatment, homeland security, and others. By using carbon-based emitters similar to those described in, we are investigating xray sources with total emission areas approaching square meter sizes.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115763491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-16DOI: 10.1109/IVNC.2004.1355013
A. Ionov, E. O. Popov, V. Svetlichnyi, M. Nikolaeva, A. Pashkevich
At present a significant attention is focused on the search for new perspective materials for low-threshold field emission cathodes which could be work stable in the relatively low (~10.~ Torr) vacuum conditions. There are many designs of field emission cathodes on the base of carbon-like materials and diamond films [l-51. The low electron affinity, wide bandgap and excellent transport properties of some conducting organic polymers suggest that they might also provide good cathode materials (61. Here we demonstrate that it is so also for imidesiloxane copolymer.
{"title":"Field emission from polymer flims","authors":"A. Ionov, E. O. Popov, V. Svetlichnyi, M. Nikolaeva, A. Pashkevich","doi":"10.1109/IVNC.2004.1355013","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355013","url":null,"abstract":"At present a significant attention is focused on the search for new perspective materials for low-threshold field emission cathodes which could be work stable in the relatively low (~10.~ Torr) vacuum conditions. There are many designs of field emission cathodes on the base of carbon-like materials and diamond films [l-51. The low electron affinity, wide bandgap and excellent transport properties of some conducting organic polymers suggest that they might also provide good cathode materials (61. Here we demonstrate that it is so also for imidesiloxane copolymer.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114618971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-16DOI: 10.1109/IVNC.2004.1354887
S. Creek, C. Edgcombe, N. de Jonge, U. Valdré
Investigation of the electron emission process of carbon nanotubes is required for their application as electron sources, for example in displays, electron beam lithography machines and electron microscopes. Fowler-Nordheim (F-N) theory has recently been extended to apply to spherical emitting surfaces.
{"title":"Properties of single field emitters deduced by use of spherical Fowler-Nordheim theory","authors":"S. Creek, C. Edgcombe, N. de Jonge, U. Valdré","doi":"10.1109/IVNC.2004.1354887","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354887","url":null,"abstract":"Investigation of the electron emission process of carbon nanotubes is required for their application as electron sources, for example in displays, electron beam lithography machines and electron microscopes. Fowler-Nordheim (F-N) theory has recently been extended to apply to spherical emitting surfaces.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114656344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-16DOI: 10.1109/IVNC.2004.1355012
K. Zhao, J. She, J. Zhou, S. Deng, J. Chen, N. Xu
Earlier, welldeveloped techniques of reactive ion etching (insotropic) and wet chemical etching (anisotropic) in combination with oxidation sharpening were used for the fabrication of nanotip arrays for field electron emission applications. The fabrications require lithography technique to form masks for the following etching, and normally high temperature oxidation sharpening process is needed. In the present paper, we report a non-lithography and non-oxidation-sharpening method for ultra-high .&nsity Si nanotip arrays fabrication. In addition, novel processes were developed to obtain Si nanotip array with different coating materials on apex, i.e., Sic and amorphous Si (a-Si). Comparative studies were carried out on the field electron emission properties of the Si nanotip arrays with different coated layers.
{"title":"Field electron emission from ultra-ifigh density Si nanotip arrays","authors":"K. Zhao, J. She, J. Zhou, S. Deng, J. Chen, N. Xu","doi":"10.1109/IVNC.2004.1355012","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355012","url":null,"abstract":"Earlier, welldeveloped techniques of reactive ion etching (insotropic) and wet chemical etching (anisotropic) in combination with oxidation sharpening were used for the fabrication of nanotip arrays for field electron emission applications. The fabrications require lithography technique to form masks for the following etching, and normally high temperature oxidation sharpening process is needed. In the present paper, we report a non-lithography and non-oxidation-sharpening method for ultra-high .&nsity Si nanotip arrays fabrication. In addition, novel processes were developed to obtain Si nanotip array with different coating materials on apex, i.e., Sic and amorphous Si (a-Si). Comparative studies were carried out on the field electron emission properties of the Si nanotip arrays with different coated layers.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123036159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-16DOI: 10.1109/IVNC.2004.1355019
H. Goldberg, P. A. Encarnacion, B. Gilchrist, R. Clarke, D. Morris, J.L. Van Noord
A gated structure of arrays of micron-sized holes has been developed at the University of Michigan. The structure can be positioned atop any uniformly structured planar emitting surface and biased to effect electron emission. The structure is designed to be compatible with a variety of emission surface technologies such as thin films (e.g., boron nitride), carbon nanotubes, and self-assembled nanostructures.
{"title":"Development of a MEMS-based gate to enhance cold-cathode electron field emission for space applications","authors":"H. Goldberg, P. A. Encarnacion, B. Gilchrist, R. Clarke, D. Morris, J.L. Van Noord","doi":"10.1109/IVNC.2004.1355019","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355019","url":null,"abstract":"A gated structure of arrays of micron-sized holes has been developed at the University of Michigan. The structure can be positioned atop any uniformly structured planar emitting surface and biased to effect electron emission. The structure is designed to be compatible with a variety of emission surface technologies such as thin films (e.g., boron nitride), carbon nanotubes, and self-assembled nanostructures.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116171567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-16DOI: 10.1109/IVNC.2004.1354897
S.H. Lee, J. Lee, W. Kim, T. Jeong, J. Heo, J. Park, J.M. Kim, S. Cho, T. Yoon, M. Yoo, J. Moon, J. Nam, H. Lee, J.H. Park, J. Ha, D. Choe
Stable electron emission from CNT emitters at required current densities is necessary to apply to the commercial devices. Generally, the current degradation during field emission has been understood as evaporation of emitter or breaking apart of tip end under intensive electrical field. In this report, we suggest one more possible mechanism that the emission current degradation may occur by increased resistance of emitters through structural deformation under field emission. The effect of current density and time on the structure of SWNT emitters was studied with TEM, low current density (100 /spl mu/A/cm/sup 2/ for 1 h) application gave no detectable structural deformation with comparison to pristine SWNTs. However, the bundles of SWNTs were deformed to amorphous structure starting at tip ends or defect sites when a high current density (500 /spl mu/m/cm/sup 2/ for more than 1h) was applied. It supports that the deformation of SWNT results from heat during emission at emitters. It is understood that the heat during emission could give a rise to destruct the crystalline structure and reconstruct the carbon bonding in SWNTs bundles. We also understood that the increase of the turn-on voltage is attributed to the increase of electrical resistance of emitters raising from structural deformation during emission process.
{"title":"Structural deformation of single-wall carbon nanotubes during field emission process","authors":"S.H. Lee, J. Lee, W. Kim, T. Jeong, J. Heo, J. Park, J.M. Kim, S. Cho, T. Yoon, M. Yoo, J. Moon, J. Nam, H. Lee, J.H. Park, J. Ha, D. Choe","doi":"10.1109/IVNC.2004.1354897","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354897","url":null,"abstract":"Stable electron emission from CNT emitters at required current densities is necessary to apply to the commercial devices. Generally, the current degradation during field emission has been understood as evaporation of emitter or breaking apart of tip end under intensive electrical field. In this report, we suggest one more possible mechanism that the emission current degradation may occur by increased resistance of emitters through structural deformation under field emission. The effect of current density and time on the structure of SWNT emitters was studied with TEM, low current density (100 /spl mu/A/cm/sup 2/ for 1 h) application gave no detectable structural deformation with comparison to pristine SWNTs. However, the bundles of SWNTs were deformed to amorphous structure starting at tip ends or defect sites when a high current density (500 /spl mu/m/cm/sup 2/ for more than 1h) was applied. It supports that the deformation of SWNT results from heat during emission at emitters. It is understood that the heat during emission could give a rise to destruct the crystalline structure and reconstruct the carbon bonding in SWNTs bundles. We also understood that the increase of the turn-on voltage is attributed to the increase of electrical resistance of emitters raising from structural deformation during emission process.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133915248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-16DOI: 10.1109/IVNC.2004.1354894
A. Karabutov, A. V. Simakin, E. N. Loubnin, G. A. Shafeev
Self-organized Si and metal micro-tip effective field electron emission arrays were produced using laser beam evaporation. Simple and relatively cheap production method of the quazi-periodical micro-tip arrays, which does not require any lithographic and microelectronic procedures, allows to form field electron emitters with very low emission threshold field of 1-5 V/w. Further improvement of the emission uniformity and the threshold field for the arrays can be achieved by modification of our production technique and introducing of carbon nanotube incorporation during the laser beam evaporation process. Quazi-periodical arrays of Si and Ni micro-tips with carbon nanotubes incorporated into the surface layer were produced by laser-assisted evaporation of Si or Ni wafers in vacuum.
{"title":"Self-organized laser-produced Si and Ni micro-tip field endfter arrays enchanced with carbon nanotubes","authors":"A. Karabutov, A. V. Simakin, E. N. Loubnin, G. A. Shafeev","doi":"10.1109/IVNC.2004.1354894","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354894","url":null,"abstract":"Self-organized Si and metal micro-tip effective field electron emission arrays were produced using laser beam evaporation. Simple and relatively cheap production method of the quazi-periodical micro-tip arrays, which does not require any lithographic and microelectronic procedures, allows to form field electron emitters with very low emission threshold field of 1-5 V/w. Further improvement of the emission uniformity and the threshold field for the arrays can be achieved by modification of our production technique and introducing of carbon nanotube incorporation during the laser beam evaporation process. Quazi-periodical arrays of Si and Ni micro-tips with carbon nanotubes incorporated into the surface layer were produced by laser-assisted evaporation of Si or Ni wafers in vacuum.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125281779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354901
Y.F. Liao, J. She, H. He, S. Deng, Jun Chen, N. Xu
In the present paper, gated CNTs devices were fabricated via processes of (i) predefining a trench with thin SiO/sub 2/ spacer layer and Cr extractor layer on top to form a fine gated device structure by using traditional ultraviolet light lithography and selective etching techniques; (ii) locally depositing iron (Fe) catalyst on the bottom of the gated structure employing a self-aligned method; (iii) locally growing CNT emitter inside the gated structure by a thermal chemical vapor deposition (CVD) system. Field emission characteristics of the gated CNTs devices were studied in a high vacuum chamber. The corresponding F-N plot of the I-V curve in were calculated and the result showed a linear behavior, demonstrating that the current was generated by field electron emission.
{"title":"Fabrication and characterization of gated carbon nanotube emitters in a trench structure","authors":"Y.F. Liao, J. She, H. He, S. Deng, Jun Chen, N. Xu","doi":"10.1109/IVNC.2004.1354901","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354901","url":null,"abstract":"In the present paper, gated CNTs devices were fabricated via processes of (i) predefining a trench with thin SiO/sub 2/ spacer layer and Cr extractor layer on top to form a fine gated device structure by using traditional ultraviolet light lithography and selective etching techniques; (ii) locally depositing iron (Fe) catalyst on the bottom of the gated structure employing a self-aligned method; (iii) locally growing CNT emitter inside the gated structure by a thermal chemical vapor deposition (CVD) system. Field emission characteristics of the gated CNTs devices were studied in a high vacuum chamber. The corresponding F-N plot of the I-V curve in were calculated and the result showed a linear behavior, demonstrating that the current was generated by field electron emission.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117064604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354999
Y. Kim, K. Sohn, Y. Cho, E. Yoo
Photosensitive organic binder was mixed with well-dispersed arc discharged single-walled carbon nanotubes (CNTs). The CNT-paste was screen-printed on the Cr-patterned glass substrate. Following back-side UV exposure, binder burn-out processes were carried out for accurate and fine patterning of paste. Emission images were obtained from a cathode successively: (a) as-prepared, (b) just after rubber-roll treatment and (c) after multiple I-V cycling. Improvement of emission properties with I-V cycling was observed from scanning electron micrographs (SEM) and I-V curves. The morphology of printed-CNTs was remarkably changed after I-V cycling. Parallel alignment of CNTs to the field direction become permanent after multiple field emission cycles. The field emission threshold was about 2.5 V/spl middot//spl mu/m/sup -1/ for the first measurement. In the successive emission cycles, the threshold fields decreased gradually to 1.9 V/spl middot//spl mu/m/sup -1/ for the final 13/sup th/ cycle. From the corresponding Fowler-Nordheim plots, the field enhancement factor (/spl beta/) of each line was evaluated. The average /spl beta/ values monotonically increased (from 1366 to 2120) with field emission repetition, which again confirmed the gradual vertical alignment of CNTs by multiple I-V cycles.
{"title":"Optimization of electron field emission from carbon nanotube paste","authors":"Y. Kim, K. Sohn, Y. Cho, E. Yoo","doi":"10.1109/IVNC.2004.1354999","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354999","url":null,"abstract":"Photosensitive organic binder was mixed with well-dispersed arc discharged single-walled carbon nanotubes (CNTs). The CNT-paste was screen-printed on the Cr-patterned glass substrate. Following back-side UV exposure, binder burn-out processes were carried out for accurate and fine patterning of paste. Emission images were obtained from a cathode successively: (a) as-prepared, (b) just after rubber-roll treatment and (c) after multiple I-V cycling. Improvement of emission properties with I-V cycling was observed from scanning electron micrographs (SEM) and I-V curves. The morphology of printed-CNTs was remarkably changed after I-V cycling. Parallel alignment of CNTs to the field direction become permanent after multiple field emission cycles. The field emission threshold was about 2.5 V/spl middot//spl mu/m/sup -1/ for the first measurement. In the successive emission cycles, the threshold fields decreased gradually to 1.9 V/spl middot//spl mu/m/sup -1/ for the final 13/sup th/ cycle. From the corresponding Fowler-Nordheim plots, the field enhancement factor (/spl beta/) of each line was evaluated. The average /spl beta/ values monotonically increased (from 1366 to 2120) with field emission repetition, which again confirmed the gradual vertical alignment of CNTs by multiple I-V cycles.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125167301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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