A novel SOI CBiCMOS compatible device structure for analog and mixed-mode circuits

M. Chan, S. Fung, C. Hu, P. Ko
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Abstract

A novel SOI CBiCMOS compatible structure has been developed which can be operated as both an MOS and lateral bipolar transistor. During the MOS operation, the new structure provides a very effective body contact to eliminate the floating-body effects such as I-V kink, low breakdown voltage and the anomalous subthreshold characteristics. In the bipolar mode, the structure provides a very efficient base contact with low base resistance compared to most existing base contact schemes.
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一种用于模拟和混合模式电路的新型SOI CBiCMOS兼容器件结构
提出了一种新型的SOI CBiCMOS兼容结构,可以同时作为MOS和侧双极晶体管工作。在MOS工作过程中,该结构提供了非常有效的体接触,消除了I-V结、低击穿电压和异常亚阈值特性等浮体效应。在双极模式下,与大多数现有的基极接触方案相比,该结构提供了非常有效的基极接触,基极电阻低。
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