A new approach to memory and logic-cylindrical domain devices

A. Bobeck, R. Fischer, A. Perneski
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引用次数: 8

Abstract

Magnetic domain behavior in single crystal magnetic oxides has been studied extensively over the last several decades. These investigations, both theoretical and experimental, are an attempt to better understand these materials and their complex domain structures. Recently single crystal oxides have been utilized in memory and logic devices. This paper will update work on cylindrical domains in orthoferrites first published in 1967 and later discussed at the 1968 and 1969 Intermag Conferences.
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存储器和逻辑圆柱域器件的新方法
在过去的几十年中,人们对单晶磁性氧化物的磁畴行为进行了广泛的研究。这些研究,无论是理论还是实验,都是为了更好地理解这些材料及其复杂的畴结构。近年来,单晶氧化物已广泛应用于存储器和逻辑器件中。本文将更新1967年首次发表并在1968年和1969年Intermag会议上讨论的关于正铁氧体圆柱形畴的工作。
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