K. Hara, D. Sekigawa, S. Endo, W. Aoyagi, S. Honda, T. Tsuboyama, M. Yamada, S. Ono, M. Togawa, Y. Ikegami, Y. Arai, I. Kurachi, T. Miyoshi, J. Haba, K. Hanagaki
{"title":"Recent Developments of SOI Pixel Devices","authors":"K. Hara, D. Sekigawa, S. Endo, W. Aoyagi, S. Honda, T. Tsuboyama, M. Yamada, S. Ono, M. Togawa, Y. Ikegami, Y. Arai, I. Kurachi, T. Miyoshi, J. Haba, K. Hanagaki","doi":"10.22323/1.309.0035","DOIUrl":null,"url":null,"abstract":"Development and application of Silicon-on-Insulator (SOI) monolithic pixel devices has been significantly boosted in recent years. After a brief review of the recent SOI development activities in various sciences, we detail the test-beam results achieving a sub-micron spatial resolution, 0.65 m, first time by a semi-conductor device, with Fine-Pixel Detector (FPIX) which has a pixel size of 8x8 m pixel size and thickness of 500 m. Another device SOFIST with pixels of 20x20 m and thickness of 500m showed a spatial resolution of ~1.2 m. Thinner devices as required for the ILC experiment are expected to be an excellent candidate even with reduced signal-to-noise ratio.","PeriodicalId":325789,"journal":{"name":"Proceedings of The 26th International Workshop on Vertex Detectors — PoS(Vertex 2017)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of The 26th International Workshop on Vertex Detectors — PoS(Vertex 2017)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22323/1.309.0035","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Development and application of Silicon-on-Insulator (SOI) monolithic pixel devices has been significantly boosted in recent years. After a brief review of the recent SOI development activities in various sciences, we detail the test-beam results achieving a sub-micron spatial resolution, 0.65 m, first time by a semi-conductor device, with Fine-Pixel Detector (FPIX) which has a pixel size of 8x8 m pixel size and thickness of 500 m. Another device SOFIST with pixels of 20x20 m and thickness of 500m showed a spatial resolution of ~1.2 m. Thinner devices as required for the ILC experiment are expected to be an excellent candidate even with reduced signal-to-noise ratio.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
