Semiconductor Bandgap grading of Buffer layer for performance optimization of thin solar cells

Prashant Kumar, B. S. Sengar, Amitesh Kumar
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Abstract

Due to the low throughput and high-cost of Si-based Photovoltaic (PV) cells, alternatives such as thin-film PV cells based on Cu2ZnSnS4 (CZTS) and Cu2Sn1-xGexS3 (CTGS) are being sought. The buffer layer is very critical as it provides band-alignment at the absorber/window layer and also reduces defects/interfacial strain. The standard buffer layer of CdS for CIGS and CZTS has a bandgap around 2.7 eV, being detrimental for the performance of PV cells, necessitating alternative buffer layers of the higher bandgap. In this work, the role of bandgap variation has been analysed for performance optimization of CZTS based PV cells using SCAPS software. This study depicts that by bandgap grading through deploying alternative buffer materials, the performance of PV cells may be upgraded.
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半导体带隙分级缓冲层的性能优化薄太阳能电池
由于硅基光伏(PV)电池的低通量和高成本,诸如基于Cu2ZnSnS4 (CZTS)和Cu2Sn1-xGexS3 (CTGS)的薄膜光伏电池的替代品正在寻求。缓冲层是非常关键的,因为它在吸收层/窗口层提供带对准,也减少缺陷/界面应变。用于CIGS和CZTS的cd的标准缓冲层具有约2.7 eV的带隙,这对PV电池的性能不利,因此需要更高带隙的替代缓冲层。在这项工作中,利用SCAPS软件分析了带隙变化对基于CZTS的光伏电池性能优化的作用。这项研究表明,通过部署替代缓冲材料来分级带隙,光伏电池的性能可能会得到提升。
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