Investigation of varying end-capacitance in external antenna for inductively coupled plasma

D. H. Kim, H. Rhee, S. Nawaz, S. Yoon
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Abstract

Summary form only given. Modern inductively coupled plasma (ICP) gained a great interest in plasma-assisted material processing in semiconductor industry. This implied by key properties of ICP having high-density, uniform plasma at low pressure. We report the effect of endcapacitance dependency for ICP. The efficiency of ICP is normally measured via inductive coupling efficiency between antenna coil and the plasma 1. Our discharge chamber had 200mm diameter and consisted of three-turn external cylindrical antenna coil through pi-type matching network. End-capacitance is used to suppress electrostatic coupling to plasma. The suppression is one of key issue from material processing in field of semiconductor industry, as it causes sputtering of dielectric materials. In this work, the plasma density and the antenna voltages are measured by changing the end-capacitance. The end-capacitance herein is a vacuum variable capacitance (VVC) ranging from 50 pF to 500 pF. While adjusting the value of capacitor, V-I value flowing through antenna was measured. The test RF discharge parameters are 13.56 MHz, applied up to 4000 W, gas pressure was maintained constant 0.2 Torr. For changing endcapacitance we measured the voltage at two points, before and after antenna coil namely Vin and Vout, using a highvoltage probe. E-H mode transition power and ion current are measured with respect to range of end-capacitance. Ion Current was measured using a floating harmonic method. With increasing the end-capacitance, the ratio of Vout/Vin has increased simultaneously. Less RF power is required for the E-H mode transition when VVC is tuned to higher capacitance. The inductive coupling is more efficient for the case where E-H mode transition is lower. The measured ion current is 2 times higher for changing Vout/Vin ratio from 0.33 to 7.15. The plasma density of ICP is associated with the resonance of inductance and capacitance of the antenna coil. The impedance of antenna, which is adjustable by changing the end-capacitance, determines the plasma-potential oscillation, voltage and current on the coil. With endcapacitance optimization, the plasma density is increased by lowering the antenna wall loss and accelerating ions by selfbias DC voltages. Varying the end-capacitance of antenna and to find optimum capacitance for antenna design has enabled to build effective ICP system.
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电感耦合等离子体外天线端容变化研究
只提供摘要形式。现代电感耦合等离子体(ICP)在半导体工业中引起了人们对等离子体辅助材料加工的极大兴趣。这是由ICP在低压下具有高密度、均匀等离子体的关键特性所暗示的。我们报告了端电容依赖性对ICP的影响。ICP的效率通常通过天线线圈和等离子体之间的电感耦合效率来测量。放电室直径为200mm,通过pi型匹配网络由三匝外圆柱形天线线圈组成。端电容用于抑制与等离子体的静电耦合。抑制介电材料的溅射是半导体工业材料加工领域的关键问题之一。在这项工作中,通过改变端电容来测量等离子体密度和天线电压。端电容为50pf ~ 500pf的真空可变电容(VVC),在调整电容值的同时,测量流经天线的V-I值。测试射频放电参数为13.56 MHz,施加功率高达4000 W,气体压力保持恒定0.2 Torr。为了改变端容,我们使用高压探头测量了天线线圈前后两点的电压,即Vin和Vout。测量了E-H模式转换功率和离子电流与端电容范围的关系。离子电流采用浮动谐波法测量。随着端电容的增大,Vout/Vin的比值也随之增大。当VVC调至高电容时,E-H模式转换所需的射频功率更少。在E-H模式跃迁较低的情况下,电感耦合效率更高。当Vout/Vin比从0.33变为7.15时,测量到的离子电流增加了2倍。ICP的等离子体密度与天线线圈电感和电容的共振有关。天线的阻抗决定了线圈上的等离子体电位振荡、电压和电流,可以通过改变端电容来调节。端容优化通过降低天线壁损耗和自偏置直流电压加速离子来提高等离子体密度。通过改变天线的端电容,寻找最优电容进行天线设计,可以构建有效的ICP系统。
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