Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering

Abstract

Titanium nitride (TiN x ) thin films were prepared on Si(111) substrates by DC reactive magnetron sputtering. The influence of chamber pressure on the lattice constants, grain size, surface morphologies, conductivity and visible-near infrared reflectance of TiN x thin films were investigated. It is shown that the main component of the thin films is cubic TiN with (200) preferred orientation. The resistivity of the TiN thin film increase along with the increase of the chamber pressure, whereas the lattice constants and average reflectance within near infrared range of the TiN thin film decrease gradually. For all the TiN films, there is a minimum reflectance around 455nm.