{"title":"Inverted Quantum-Dot Light-Emitting Diodes with WO3/Zinc-Tin-Oxide Electron Transporting Layers","authors":"Dong-Jin Kim, Ho-Nyeon Lee","doi":"10.23919/AM-FPD.2018.8437438","DOIUrl":null,"url":null,"abstract":"We demonstrate the enhanced efficiency of inorganic/organic hybrid quantum-dot light-emitting diodes (QD-LEDs) by adopting WO3/zinc-tin-oxide (ZTO) as an electron-transporting layer (ETL). The relationship between the ETL properties and device performance was explained by the effect of the WO3 layer on electron transport, which was investigated using thin film analysis methods. A maximum luminance of 700 cd/m2 and current efficiency of 0.43 cd/A were obtained from a QD-LED with 40-nm-thick WO3. The current efficiency was more than twice that of a device without a WO3 layer.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"322 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2018.8437438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We demonstrate the enhanced efficiency of inorganic/organic hybrid quantum-dot light-emitting diodes (QD-LEDs) by adopting WO3/zinc-tin-oxide (ZTO) as an electron-transporting layer (ETL). The relationship between the ETL properties and device performance was explained by the effect of the WO3 layer on electron transport, which was investigated using thin film analysis methods. A maximum luminance of 700 cd/m2 and current efficiency of 0.43 cd/A were obtained from a QD-LED with 40-nm-thick WO3. The current efficiency was more than twice that of a device without a WO3 layer.
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