Closed loop control method of turn-on di/dt and turn-off du/dt for insulated gate bipolar transistors

Abstract

With the rapid development of new power electronic devices, the application of high frequency switches has become more and more extensive, so it is very important to control the turn-on and turn-off losses of power electronic devices. In this paper, a new type of switching control for closed loop turn-on di/dt and turn-off du/dt is put forward after the IGBT (Insulated Gate Bipolar Transistor) drive circuit is deeply studied. An inductor is connected at the emitter of IGBT as feedback sampling, and the control of the IGBT turn-on is realized through a few auxiliary circuits. A capacitor is connected between the collector and the gate of the IGBT as feedback sampling, and the control of the IGBT turn-off is realized through a few auxiliary circuits. Multisim software is used for simulation and simulation results verify the correctness of theoretical analysis. The driving circuit can realize the mutual independence between the two closed loop control methods, which reduces the losses of IGBT in the turn-on and turn-off. Reducing losses has important significance to the operation efficiency, reliability and safety of the power supply at the same time.