P. Cancelliere, V. Colli, R. D. Stefano, G. Tomassi
{"title":"A comparative analysis of 4KW PSBs for welding machine","authors":"P. Cancelliere, V. Colli, R. D. Stefano, G. Tomassi","doi":"10.1109/PEDS.2003.1283201","DOIUrl":null,"url":null,"abstract":"The paper deals about the study conducted to evaluate the reliability of H bridge topology, for a DC/DC converter with phase-shift modulation strategy, with three different power devices. The first one is based on 500 V 0.087? 46 A HEXFET/sup /spl trade// power MOSFETs, the second one adopts MDmesh/sup /spl trade// power MOSFETs with external Schottky and ultrafast diodes in order to shunt the reverse current and the third one is based on CoolMOS power MOSFETs integrating the diodes in the same package. Each of them is reviewed, prototyped and investigated. Experimental results show the technological limits of each solution and suggest their right application range.","PeriodicalId":106054,"journal":{"name":"The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003.","volume":"334 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDS.2003.1283201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The paper deals about the study conducted to evaluate the reliability of H bridge topology, for a DC/DC converter with phase-shift modulation strategy, with three different power devices. The first one is based on 500 V 0.087? 46 A HEXFET/sup /spl trade// power MOSFETs, the second one adopts MDmesh/sup /spl trade// power MOSFETs with external Schottky and ultrafast diodes in order to shunt the reverse current and the third one is based on CoolMOS power MOSFETs integrating the diodes in the same package. Each of them is reviewed, prototyped and investigated. Experimental results show the technological limits of each solution and suggest their right application range.
本文讨论了一种采用移相调制策略的DC/DC变换器在三种不同功率器件下的H桥拓扑可靠性评估研究。第一个是基于500 V 0.087?一个HEXFET/sup /spl贸易//功率mosfet，第二个采用MDmesh/sup /spl贸易//功率mosfet与外部肖特基和超快二极管，以分流反向电流，第三个是基于CoolMOS功率mosfet集成在同一封装的二极管。每一个都被审查，原型和调查。实验结果表明了每种溶液的技术极限，并提出了合适的适用范围。
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
