V. Kuchinskii, V. I. Vasil’ev, G. S. Gagis, A. G. Deryagin, V. Dudelev
{"title":"Laser heterostructures AlGaInAsSb/GaInSbAsP/GaSb(InAs) for middle infra-red range","authors":"V. Kuchinskii, V. I. Vasil’ev, G. S. Gagis, A. G. Deryagin, V. Dudelev","doi":"10.1109/LFNM.2003.1246079","DOIUrl":null,"url":null,"abstract":"This work shows that pentanary solid solutions (PSS) AlGaInAsSb and GaInSbAsP isoperiodic to GaSb and InAs substrates give wide possibilities to control heterojunction parameters. Heterojunctions I, II and III types can be formed for the lightwave range /spl lambda/=3-4/spl mu/m. Valence and conductivity band offsets can be varied in a wide range at a constant energy gap of the active region. AlGaInAsSb/GaInSbAsP/GaSb(InAs) heterostructures were grown from Sb-rich melts by liquid phase epitaxy (LPE) method at 570-600 /spl deg/C.","PeriodicalId":368970,"journal":{"name":"5th International Workshop on Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"5th International Workshop on Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LFNM.2003.1246079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work shows that pentanary solid solutions (PSS) AlGaInAsSb and GaInSbAsP isoperiodic to GaSb and InAs substrates give wide possibilities to control heterojunction parameters. Heterojunctions I, II and III types can be formed for the lightwave range /spl lambda/=3-4/spl mu/m. Valence and conductivity band offsets can be varied in a wide range at a constant energy gap of the active region. AlGaInAsSb/GaInSbAsP/GaSb(InAs) heterostructures were grown from Sb-rich melts by liquid phase epitaxy (LPE) method at 570-600 /spl deg/C.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
