65nm SOI CMOS SoC Technology for Low-Power mmWave and RF Platform

Abstract

An RF and mm-wave platform developed in 65 nm SOI CMOS technology is presented. The SOI FET performance in a wired cell is measured up to fT=300 GHz and 200 GHz for NFET and PFET. Ring oscillator records 3.6 psec minimum inverter stage delay. Back-end-of-line vertical native capacitor (VNCAP) and on-chip inductor performances are reported. The performance scaling trends of mmWave PLL front-end components are presented.