S. Kiravittaya, Maetee Kunrugsa, S. Thainoi, S. Ratanathammaphan, S. Panyakeow
{"title":"Electronic structure calculation of GaSb/GaAs quantum dot","authors":"S. Kiravittaya, Maetee Kunrugsa, S. Thainoi, S. Ratanathammaphan, S. Panyakeow","doi":"10.1109/IEECON.2014.6925841","DOIUrl":null,"url":null,"abstract":"The paper describes a method to calculate electronic band structure, carrier wave function and quantized energies of dome-shaped GaSb/GaAs quantum dot (QD) structure. Type-II band alignment of GaSb/GaAs is introduced. Then, fabrication of realistic GaSb/GaAs QDs by molecular beam epitaxy is described. Based on the structural information obtained from realistic QD, finite element analysis of strain in and around QD is performed. Strain-induced bandgap modification is considered for calculating the discrete energy levels in QD. Effects of QD height and diameter variation are quantified.","PeriodicalId":306512,"journal":{"name":"2014 International Electrical Engineering Congress (iEECON)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Electrical Engineering Congress (iEECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEECON.2014.6925841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The paper describes a method to calculate electronic band structure, carrier wave function and quantized energies of dome-shaped GaSb/GaAs quantum dot (QD) structure. Type-II band alignment of GaSb/GaAs is introduced. Then, fabrication of realistic GaSb/GaAs QDs by molecular beam epitaxy is described. Based on the structural information obtained from realistic QD, finite element analysis of strain in and around QD is performed. Strain-induced bandgap modification is considered for calculating the discrete energy levels in QD. Effects of QD height and diameter variation are quantified.
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