John M. Bean, Stephen, R. Nelson, Ralph E. Williams
{"title":"Design and Process Sensitivity of a Two Stage 6-18 GHz Monolithic Feedback Amplifier","authors":"John M. Bean, Stephen, R. Nelson, Ralph E. Williams","doi":"10.1109/MCS.1985.1113635","DOIUrl":null,"url":null,"abstract":"The design of a 6-18 GHz, two stage monolithic feedback amplifier is discussed, and the critical process and FET parameters are identified. Variations in circuit performance experienced during a pilot production run are correlated with the predictions of a sensitivity analysis. The critical parameters are substrate height, GaAs sheet resistivity, gate-source capacitance, transconductance, and drain-source resistance. Measured results show the importance of substrate height and sheet resistivity in the control of gain flatness.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1985.1113635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The design of a 6-18 GHz, two stage monolithic feedback amplifier is discussed, and the critical process and FET parameters are identified. Variations in circuit performance experienced during a pilot production run are correlated with the predictions of a sensitivity analysis. The critical parameters are substrate height, GaAs sheet resistivity, gate-source capacitance, transconductance, and drain-source resistance. Measured results show the importance of substrate height and sheet resistivity in the control of gain flatness.
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