Pub Date : 1987-06-01DOI: 10.1109/MCS.1987.1114513
T. Vu, J. Hattis
This paper describes the analysis, design, and development of a high-speed A/D and D/A converter using phase-quantization sampling. A monolithic GaAs A/D and D/A converter has been demonstrated within a RF signal acquisition system. Performance data on the monolithic IC reveals that the 3-bit quantization system exhibits signal reconstruction with harmonic suppression exceeding -25 dB across an IF bandwidth of greater than 900 MHz.
{"title":"A Monolithic GaAs 3-Bit Phase Quantization Sampler","authors":"T. Vu, J. Hattis","doi":"10.1109/MCS.1987.1114513","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114513","url":null,"abstract":"This paper describes the analysis, design, and development of a high-speed A/D and D/A converter using phase-quantization sampling. A monolithic GaAs A/D and D/A converter has been demonstrated within a RF signal acquisition system. Performance data on the monolithic IC reveals that the 3-bit quantization system exhibits signal reconstruction with harmonic suppression exceeding -25 dB across an IF bandwidth of greater than 900 MHz.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131419977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-06-01DOI: 10.1109/MCS.1987.1114520
A. Jacomb-Hood, D. Seielstad, J. D. Merrill
This paper describes the design and performance of a three-bit monolithic phase shifter at V-band. The selected circuit approach was a reflection phase shifter with switched delay lines. Schottky diodes were used as the switching elements. Tested at 62.5 GHz, the RMS phase error was 2.7°, the insertion loss 10.8 +- 1.8 dB (including fixture loss), and the VSWR was better than 2.1:1. The maximum DC power requirement was 40 mW.
{"title":"A Three-Bit Monolithic Phase Shifter at V-Band","authors":"A. Jacomb-Hood, D. Seielstad, J. D. Merrill","doi":"10.1109/MCS.1987.1114520","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114520","url":null,"abstract":"This paper describes the design and performance of a three-bit monolithic phase shifter at V-band. The selected circuit approach was a reflection phase shifter with switched delay lines. Schottky diodes were used as the switching elements. Tested at 62.5 GHz, the RMS phase error was 2.7°, the insertion loss 10.8 +- 1.8 dB (including fixture loss), and the VSWR was better than 2.1:1. The maximum DC power requirement was 40 mW.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127070143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-06-01DOI: 10.1109/MCS.1987.1114504
J. Geddes, V. Sokolov, A. Contolatis
A monolithic W-band frequency doubler has been developed using submicron gate length GaAs MESFETs fabricated on ion implanted material. The frequency doubler provides a power output of over 4.0 mW at 94 GHz with an input drive of 70 mW at 47 GHz. To of a MESFET our knowledge this is the first report frequency doubler operating at W-band.
{"title":"W-band GaAs MESFET Frequency Doubler","authors":"J. Geddes, V. Sokolov, A. Contolatis","doi":"10.1109/MCS.1987.1114504","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114504","url":null,"abstract":"A monolithic W-band frequency doubler has been developed using submicron gate length GaAs MESFETs fabricated on ion implanted material. The frequency doubler provides a power output of over 4.0 mW at 94 GHz with an input drive of 70 mW at 47 GHz. To of a MESFET our knowledge this is the first report frequency doubler operating at W-band.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128695431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-06-01DOI: 10.1109/MCS.1987.1114514
Y. Hosono, H. Sato, Y. Mira, S. Ichikawa, H. Hirayama, K. Katsukawa, K. Ueda, K. Uetake, T. Noguchi, H. Kohzu
The electrical characteristics stability and reliability were investigated on newly developed high speed GaAs logic ICS. A resistor-loaded source-coupled FET logic (SCFL) was employed as a basic circuit architecture. The selectively epitaxial grown n/sup +/ - GaAs layers were aclopted for the contact regions of the WSi self-aligned gate FET. Maximum operating data rate of more than 2.6 Gb/s was achieved in these devices, guaranteeing sufficient supply voltage and phase margin. No failure has been observed in DC bias test for 3,000 hours and in RF operational test at 2 Gb/s for 7,000 hours.
{"title":"Stability and Reliability Investigation on Fully ECL Compatible High Speed- Logic ICs.","authors":"Y. Hosono, H. Sato, Y. Mira, S. Ichikawa, H. Hirayama, K. Katsukawa, K. Ueda, K. Uetake, T. Noguchi, H. Kohzu","doi":"10.1109/MCS.1987.1114514","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114514","url":null,"abstract":"The electrical characteristics stability and reliability were investigated on newly developed high speed GaAs logic ICS. A resistor-loaded source-coupled FET logic (SCFL) was employed as a basic circuit architecture. The selectively epitaxial grown n/sup +/ - GaAs layers were aclopted for the contact regions of the WSi self-aligned gate FET. Maximum operating data rate of more than 2.6 Gb/s was achieved in these devices, guaranteeing sufficient supply voltage and phase margin. No failure has been observed in DC bias test for 3,000 hours and in RF operational test at 2 Gb/s for 7,000 hours.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134026707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-06-01DOI: 10.1109/MCS.1987.1114524
H.-L.A. Hung, A. Ezzeddine, L. Holdeman, F. Phelleps, J. F. Allison, A. Cornfeld, T. Smith, H. Huang
GaAs power MMIC amplifiers with an optimized FET structure operating at K/sub a/-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mw. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mw at 28 GHz. These results may represent the highest power/gain yet demonstrated from cascaded stages of MMICs with on-chip bias and DC blocking at K/sub a/-band.
采用优化的K/sub /波段FET结构的GaAs功率MMIC放大器实现了4.3 dB的小信号增益和481 mw的输出功率。这些1.7 x 0.9 mm mmic包括直流阻塞电容器和偏置网络。级联四级放大器在28 GHz时的功率增益为18.9 dB，输出功率为437 mw。这些结果可能代表了具有片上偏置和K/sub / a/波段直流阻塞的mmic级联级所证明的最高功率/增益。
{"title":"K/sub a/-band Monolithic GaAs Power FET Amplifiers","authors":"H.-L.A. Hung, A. Ezzeddine, L. Holdeman, F. Phelleps, J. F. Allison, A. Cornfeld, T. Smith, H. Huang","doi":"10.1109/MCS.1987.1114524","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114524","url":null,"abstract":"GaAs power MMIC amplifiers with an optimized FET structure operating at K/sub a/-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mw. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mw at 28 GHz. These results may represent the highest power/gain yet demonstrated from cascaded stages of MMICs with on-chip bias and DC blocking at K/sub a/-band.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133226280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-06-01DOI: 10.1109/MCS.1987.1114518
T. Ohira, T. Tokumitsu, T. Hiraoka, Yuichi Kihata, K. Araki, H. Kato
Key monolithic circuits to Ka-band full MMIC receivers have been designed and fabricated. Conventional hybrid-oriented elements such as RF image-rejection filters, LO dielectric resonators and IF hybrid couplers have been eliminated for the full MMIC configuration. Prospects have been obtained for realization of very-small-size microwave communication receivers.
{"title":"Development of Key Monolithic Circuits to Ka-Band Full MMIC Receivers","authors":"T. Ohira, T. Tokumitsu, T. Hiraoka, Yuichi Kihata, K. Araki, H. Kato","doi":"10.1109/MCS.1987.1114518","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114518","url":null,"abstract":"Key monolithic circuits to Ka-band full MMIC receivers have been designed and fabricated. Conventional hybrid-oriented elements such as RF image-rejection filters, LO dielectric resonators and IF hybrid couplers have been eliminated for the full MMIC configuration. Prospects have been obtained for realization of very-small-size microwave communication receivers.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115861407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-06-01DOI: 10.1109/MCS.1987.1114512
N. Dagli, C. Fonstad
Using a mode matching technique, a modular microwave equivalent circuit incorporating both guided and continuum spectra has been developed to model integrated optoelectronic components accurately with limited computational effort. The analysis is verified with experiments on GaAs rib waveguides and directional and three guide couplers.
{"title":"A New Method of Analyzing and Modeling Integrated Optoelectronic Components","authors":"N. Dagli, C. Fonstad","doi":"10.1109/MCS.1987.1114512","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114512","url":null,"abstract":"Using a mode matching technique, a modular microwave equivalent circuit incorporating both guided and continuum spectra has been developed to model integrated optoelectronic components accurately with limited computational effort. The analysis is verified with experiments on GaAs rib waveguides and directional and three guide couplers.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127256984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-06-01DOI: 10.1109/MCS.1987.1114511
D. Seymour, D. Heston, R. Lehmann
A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration.
{"title":"Monolithic MBE GaAs Pin Diode Limiter","authors":"D. Seymour, D. Heston, R. Lehmann","doi":"10.1109/MCS.1987.1114511","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114511","url":null,"abstract":"A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131562543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-06-01DOI: 10.1109/MCS.1987.1114509
T. S. Howard, A. Pavio
A novel broadband mixer topology, which can be implemented using either monolithic or discrete integrated circuit methods, has been developed using distributed design techniques. The MMIC mixer exhibits excellent 2-18 GHz conversion gain performance with signal handling capabilities and LO drive requirements similar to conventional diode double-balanced circuits.
{"title":"A Distributed Monolithic 2-18 GHz Dual-gate FET Mixer","authors":"T. S. Howard, A. Pavio","doi":"10.1109/MCS.1987.1114509","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114509","url":null,"abstract":"A novel broadband mixer topology, which can be implemented using either monolithic or discrete integrated circuit methods, has been developed using distributed design techniques. The MMIC mixer exhibits excellent 2-18 GHz conversion gain performance with signal handling capabilities and LO drive requirements similar to conventional diode double-balanced circuits.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115260380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-06-01DOI: 10.1109/MCS.1987.1114508
P. Terzian
A monolithic amplifier has been developed using a three-stage structure with feedback input/output stages and a reactively matched middle stage. The amplifier has exhibited greater than 12dB gain across 5-20 GHz bandwidth at a bias current of 40mA. The current to gain efficiency of 3.3mA/dB is the highest ever reported for a monolithic amplifier covering this bandwidth. The VSWR is less than 2.0:1 at input and less than 2.5:1 at output. The middle stage also provides a separate gain control with greater than 10dB dynamic range.
{"title":"A Low Current, High Gain Monolithic Amplifier Covering 5-20 GHz Bandwidth","authors":"P. Terzian","doi":"10.1109/MCS.1987.1114508","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114508","url":null,"abstract":"A monolithic amplifier has been developed using a three-stage structure with feedback input/output stages and a reactively matched middle stage. The amplifier has exhibited greater than 12dB gain across 5-20 GHz bandwidth at a bias current of 40mA. The current to gain efficiency of 3.3mA/dB is the highest ever reported for a monolithic amplifier covering this bandwidth. The VSWR is less than 2.0:1 at input and less than 2.5:1 at output. The middle stage also provides a separate gain control with greater than 10dB dynamic range.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115618893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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