{"title":"Simulating Wide Bandgap FET Models in LTspice","authors":"Jongwon Shin, Joonho Shin","doi":"10.23919/IPEC-Himeji2022-ECCE53331.2022.9806913","DOIUrl":null,"url":null,"abstract":"Proper usage of FET models in simulation saves time and effort in developing power converters. This paper presents how gallium nitride or silicon carbide (SiC) FET models provided by their manufacturers are verified and utilized in LTspice XVII simulation. The simulation and experimental results of a double pulse test circuit using SiC FETs are compared to prove the preciseness and feasibility of the simulation.","PeriodicalId":256507,"journal":{"name":"2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IPEC-Himeji2022-ECCE53331.2022.9806913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Proper usage of FET models in simulation saves time and effort in developing power converters. This paper presents how gallium nitride or silicon carbide (SiC) FET models provided by their manufacturers are verified and utilized in LTspice XVII simulation. The simulation and experimental results of a double pulse test circuit using SiC FETs are compared to prove the preciseness and feasibility of the simulation.
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