Research on high-power laser diode used for triggering photoconductive semiconductor switch

Wei Wang, Yi Liu, Yi Chen, L. Xia, Jinshui Shi, Jianjun Deng
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引用次数: 1

Abstract

A kind of laser diode with high power and short duration is described in this paper. The laser diode is used for triggering gallium arsenide photoconductive semiconductor switch (GaAs PCSS) in the experiment. The driver of the laser diode is based on RF MOSFET and it provides an ultra-fast pulse current, which has the rise-time, FWHM and peak current are 4ns, 17ns and 130A, respectively. The characteristics of the laser diode have been researched, including laser pulse waveform, optical field distribution, and limiting drive current. Using a combination of two laser diodes, the PCSS has a better performance than being triggered by single laser diode in the experiment.
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用于触发光导半导体开关的大功率激光二极管的研究
本文介绍了一种高功率、短持续时间的激光二极管。实验中使用激光二极管触发砷化镓光导半导体开关(GaAs PCSS)。该激光器的驱动器基于射频MOSFET,提供了超快的脉冲电流,其上升时间为4ns, FWHM为17ns,峰值电流为130A。研究了激光二极管的特性,包括激光脉冲波形、光场分布和限制驱动电流。在实验中,采用双激光二极管组合的方式,比单激光二极管触发具有更好的性能。
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