GAA 3D Si-MOSFET Based Hybrid Biosensor with Integrated Amplifier

Nawaz Shafi, Jaydeep Singh Parmaar, Chitrakant Sahu, C. Periasamy
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Abstract

In this paper, we have demonstrated an idea of integration of biosensing, amplifying, and noise suppression on a single chip through a hybrid configured biosensor. The proposed biosensor is based on embedded cavity gate all around (GAA) inversion mode conventional MOS device. Lookup table based Verilog-A models for p/n type devices for different biomolecules have been developed using Atlas device simulator. The biosamples have been calibrated by incorporating them as dielectric materials with specific dielectric permitivities in the nanogap cavity. Circuit level simulations have been carried in Cadence Virtuoso. The sensitivity performance of hybrid biosensor has been evaluated interms of shift in logic threshold voltage (ΔVLt/ΔK) and voltage gain (AV ). Further we have also investigated various hybrid biosensor configurations comprising of resistive load sensing stages. For APTES (K = 3.57), in CMOS configured hybrid topology AV and ΔVLt of ≈ 30 and ≈ 240mV respectively, whereas for resistive load topology are fond to be ≈ 17.5 and ≈ 200mV respectively.
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基于集成放大器的GAA 3D Si-MOSFET混合生物传感器
在本文中,我们展示了通过混合配置的生物传感器在单个芯片上集成生物传感,放大和噪声抑制的想法。所提出的生物传感器是基于GAA反转模式的传统MOS器件。基于查找表的Verilog-A模型利用Atlas设备模拟器开发了针对不同生物分子的p/n型设备。通过将生物样品作为具有特定介电常数的介电材料纳入纳米隙腔中,对生物样品进行了校准。电路级仿真已在Cadence Virtuoso中进行。根据逻辑阈值电压(ΔVLt/ΔK)和电压增益(AV)的变化对混合生物传感器的灵敏度性能进行了评价。此外,我们还研究了各种混合生物传感器配置,包括电阻负载敏感阶段。对于APTES (K = 3.57),在CMOS配置的混合拓扑中,AV和ΔVLt分别为≈30和≈240mV,而对于电阻负载拓扑,AV和ΔVLt分别为≈17.5和≈200mV。
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